Barium titanate-based superparaelectric film as well as low-temperature preparation method and application thereof

Abstract

The invention discloses a barium titanate-based superparaelectric film material, a method for integrally preparing a barium titanate-based superparaelectric film on a silicon substrate at medium and low temperatures and application of the barium titanate-based superparaelectric film material. The method comprises the steps that under the condition of room temperature (without heating) or 150 DEG C, a buffer layer and a barium titanate base film are sequentially subjected to magnetron sputtering on the surface of a platinum-titanium-plated base body from bottom to top, a top electrode is subjected to magnetron sputtering on the surface of the barium titanate base film, and the buffer layer is made of conductive oxide lanthanum nickelate which can be matched with barium titanate base lattices and is of a perovskite structure; the sputtering mode is a continuous sputtering mode of the lanthanum nickelate buffer layer and the barium titanate base film. According to the invention, the temperature for preparing the barium titanate-based membrane material can be reduced to room temperature or 150 DEG C, and the barium titanate-based membrane material has a nano polar region with good dispersion, high energy storage density and high energy storage efficiency, and high energy storage characteristics are not changed along with the increase of thickness. Moreover, by reducing the thickness of the superparaelectric film layer, the capacitance density and the dielectric constant are increased, and the requirement of a thin film transistor for the high dielectric constant of the dielectric layer is met.

Description

technical field [0001] The invention relates to the technical field of electronic material development and thin film material preparation, in particular to a barium titanate-based superparaelectric film and its medium and low temperature preparation method and application. Background technique [0002] The information disclosed in this background section is only intended to increase the understanding of the general background of the present invention, and is not necessarily taken as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to those skilled in the art. [0003] In recent years, with the rapid development of electronic devices such as capacitors, power tuning devices, pulsed power systems, and thin-film transistors, materials and devices with high capacitance density, high dielectric constant, high energy storage density, and high energy storage efficiency are of great interest. It is one of the frontiers and hots...

AI Technical Summary

Problems solved by technology

High fabrication temperature will not only increase additional thermal budget, process flow and cost expenditure, but also bring great challenges to the compatibility of dielectric capacitors with CMOS-Si technology

In addition, the high temperature makes the crystallization size (grain size) larger, causing the ferroelectric capacitor to display a nearly square hysteresis dielectric response ("hysteresis loop") under an external electric field, and its recyclable capacitance has low energy density and low charge and discharge efficiency. Poor, it is difficult to integrate with existing electric energy storage and conversion technologies, and in severe cases, it will lead to device failure

Moreover, with the development of integrated circuits, in the practical application of thin film transistors, the dielectric layer materials have problems such as high preparation temperature, capacitance density and low dielectric constant, which seriously restrict the development of thin film transistors.

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