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LaBiO3 film, and LaBiO3 ceramic target material and preparation method thereof

A technology of ceramic target material and adhesive, which is applied in the direction of metal material coating process, ion implantation plating, coating, etc., and can solve the problems such as the decline of coating quality

Active Publication Date: 2020-02-28
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, how to further improve the compactness, purity and uniformity of the target, improve the surface quality of the oxide film, and avoid the gradual decline in the coating quality due to the decline in the target performance during the sputtering process of the target is an important issue in the field of target preparation. technical challenge

Method used

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  • LaBiO3 film, and LaBiO3 ceramic target material and preparation method thereof
  • LaBiO3 film, and LaBiO3 ceramic target material and preparation method thereof
  • LaBiO3 film, and LaBiO3 ceramic target material and preparation method thereof

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preparation example Construction

[0032] Given the preparation of LaBiO 3 The target density, purity and uniformity of the thin film, this application provides a brand new LaBiO 3 Ceramic target material, this kind of oxide ceramic target material is synthesized for the first time, and has high density, purity and uniformity, and the surface quality of the oxide film grown from this target material is high. Specifically, the embodiment of the present invention discloses a LaBiO 3 A method for preparing a ceramic target, comprising the following steps:

[0033] A) La 2 o 3 and Bi 2 o 3 After mixing according to the stoichiometric ratio of 1:1.1, ball milling is carried out, and the initial mixture is obtained after classification;

[0034] B) pre-sintering the initial mixture after being placed on an alumina pad to obtain an initial sintered powder;

[0035] C) mixing the initial sintered powder with a binder and then drying to make a green body to obtain a ceramic green body;

[0036] D) sintering the ...

Embodiment 1

[0046] Baking material: Weigh 15gLa respectively 2 o 3 (analytically pure, AR) and 15gBi 2 o 3 (analytical pure, AR) was put into a crucible, covered with a crucible lid, and baked in an oven for 4 hours at a temperature of 100°C;

[0047] Ingredients: Weigh 7.7725g La with an analytical balance 2 o 3 and 12.2275g Bi 2 o 3 , La 2 o 3 and Bi 2 o 3 The stoichiometric ratio is 1:1.1, because Bi is volatile at high temperature;

[0048] Ball milling: Put the powder into a nylon tank with zirconia balls as the balls for mixing, mill in the ball mill for 2 days, put the milled powder into a 100-mesh porous sieve for classification, and put the uniform powder into the oven save;

[0049] Pre-sintering: Put the uniformly mixed powder on the alumina gasket, and put it in a high-temperature furnace for pre-sintering, raise the temperature from room temperature to 500°C at 5°C / min, then raise the temperature to 880°C at 2°C / min, and keep it for 1h , naturally cooled to room ...

Embodiment 2

[0058] Baking material: Weigh 15gLa respectively 2 o 3 (analytically pure, AR) and 15gBi 2 o 3 (analytical pure, AR) was put into a crucible, covered with a crucible lid, and baked in an oven for 4 hours at a temperature of 100°C;

[0059] Ingredients: Weigh 7.7725g La with an analytical balance 2 o 3 and 12.2275g Bi 2 o 3 , La 2 o 3 and Bi 2 o 3 The stoichiometric ratio is 1:1.1, because Bi is volatile at high temperature;

[0060] Ball milling: Put the powder into a nylon tank with zirconia balls as the balls for mixing, mill in the ball mill for 2 days, put the milled powder into a 100-mesh porous sieve for classification, and put the uniform powder into the oven save;

[0061] Pre-sintering: Put the uniformly mixed powder on the alumina gasket, and put it in a high-temperature furnace for pre-sintering, raise the temperature from room temperature to 500°C at 5°C / min, then raise the temperature to 880°C at 2°C / min, and keep it for 1h , naturally cooled to room ...

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Abstract

The invention provides a preparation method of a LaBiO3 ceramic target material. The preparation method comprises the following steps: A) mixing La2O3 and Bi2O3, and carrying out ball milling and grading treatment to obtain an initial mixture; B) placing the initial mixture on an alumina gasket, carrying out presintering, and then performing cooling to obtain initial sintered powder; C) mixing theinitial sintered powder with an adhesive, carrying out drying and performing blank preparation to obtain a ceramic body; and D) placing the ceramic body on an alumina gasket, carrying out sintering again, and performing cooling to obtain the LaBiO3 ceramic target material. The invention also provides the LaBiO3 ceramic target material and application thereof. The LaBiO3 ceramic target material provided by the invention has the advantages of simple preparation, high purity, high density, uniform components, smooth surface and good stability.

Description

technical field [0001] The invention relates to the technical field of new materials, in particular to a LaBiO 3 Thin film, LaBiO 3 Ceramic target material and its preparation method. Background technique [0002] In 2006, scientists predicted a new type of solid material - topological insulator. Topological insulators have gradually become an important research direction in the fields of condensed matter physics and materials science. It is a state of matter with novel quantum properties. The existence of the structure depends on its own spin-orbit coupling effect. [0003] Topological insulators are characterized by topologically protected non-gap edge states on the boundary or surface, that is, there are Dirac electronic states that cross the energy gap, the surface is metallic, but the interior is insulating, and there is an energy gap in the bulk electronic structure, and there is no carrier movement. Topological insulator materials have strong topological surface s...

Claims

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Application Information

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IPC IPC(8): C04B35/453C04B35/50C04B35/622C23C14/08C23C14/34C23C14/35
CPCC04B35/453C04B35/50C04B35/622C04B2235/6562C04B2235/6567C23C14/08C23C14/3414C23C14/35
Inventor 翟晓芳刘其鑫张静娴陆勤雯赵爱迪
Owner UNIV OF SCI & TECH OF CHINA
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