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A method for preparing a large-area bondable semiconductor proximity sensor

A proximity sensor and semiconductor technology, applied in the field of sensors, can solve the problems of small size of organic single crystal, signal detection distortion, difficult to control thickness, etc., and achieve broad development prospects and application potential, high responsivity and stability, super responsivity and stability effects

Active Publication Date: 2021-06-18
NORTHEAST NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the semiconductor-type proximity sensors reported so far use organic single crystals as the sensing layer, and organic single crystals are small in size, difficult to control in thickness, and difficult to mass-produce, which limits the preparation of large-area integrated devices.
Makes current organic semiconductor type proximity sensors unusable for shape detection of target objects
Moreover, the existing organic semiconductor proximity sensors also use PET or rigid materials as the substrate, which also has the problem of not being able to conform to curved objects, resulting in signal detection distortion.

Method used

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  • A method for preparing a large-area bondable semiconductor proximity sensor
  • A method for preparing a large-area bondable semiconductor proximity sensor
  • A method for preparing a large-area bondable semiconductor proximity sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] Example 1. Preparation of a bondable organic semiconductor proximity sensor with DNTT film as the sensing layer

[0059] Such as figure 1 Shown:

[0060] 1. Octadecyltrichlorosilane (OTS) modifies the silicon surface of the substrate. The specific steps are as follows: (1) Place the cut silicon wafer in acetone, ethanol, and secondary deionized water for ultrasonic cleaning, and then use nitrogen Blow dry; (2) silicon wafer is carried out hydroxylation: the silicon wafer after step (1) is processed carries out oxygen plasma treatment, and power can be 100W, and time can be 1min, and gas flow rate can be 8sccm; (3) to OTS modification of silicon wafers: soak the substrate in a mixed solution of n-heptane and octadecyltrichlorosilane (OTS for short) with a volume ratio of 1000:1 (specifically 80 mL of n-heptane and 80 μL of OTS) for 30- 40s, and finally ultrasonically cleaned with chloroform and dried with nitrogen to obtain an OTS-modified substrate.

[0061] 2. Prepa...

Embodiment 2

[0077] Embodiment 2, Proximity Sensor Real-time Test Proximity Stimulation of a Tiny Charged Object

[0078] The device of Example 1 was placed on a clean and flat sample stage for testing. The human finger approaching the DNTT film proximity sensor has a height of about 1-2cm, and the influence of the approach and retreat of the finger on the current signal of the device is tested in real time. figure 2 In (a) and figure 2 Middle (b) represents the photo graph and the current response signal graph during the test, respectively. This result shows that the proximity sensor prepared by the present invention can effectively detect the proximity of a finger using the organic thin film as the sensing layer.

Embodiment 3

[0079] Embodiment 3, Proximity sensor real-time testing of different distances approaching stimuli with tiny charged objects

[0080] The device of Example 1 was placed on a clean and flat sample stage for testing. The height of the plastic ruler close to the DNTT film proximity sensor is 2cm, 5cm, 8cm. Real-time test the influence of different distances of the plastic ruler on the current signal of the device. image 3 In (a) and image 3 Middle (b) represents the photo graph and the current response signal graph during the test, respectively. This result shows that the proximity sensor prepared by the present invention can effectively distinguish the proximity distance of the plastic ruler by using the organic film as the sensing layer.

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Abstract

The invention discloses a method for preparing a large-area semiconductor-type proximity sensor and its detection of tiny charged objects. The large-area semiconductor proximity sensor includes a support layer, an insulating layer, a semiconductor layer (sensing layer) and electrodes, wherein the sensing layer is an organic semiconductor thin film. The invention uses the semiconductor layer as the sensing layer to realize the proximity detection of objects with tiny charges, including distance recognition, space position detection, shape recognition and the like. In addition, the proximity sensor can be conformally attached to curved objects without affecting the sensing performance. The proximity sensor has high sensitivity and stability, and low power consumption.

Description

technical field [0001] The invention belongs to the field of sensors, and relates to a large-area bondable organic semiconductor proximity sensor and its application in the detection of tiny charged objects. Background technique [0002] Electronic skin has skin-like sensing functions, such as pressure sensing, vibration sensing, humidity sensing, temperature sensing, etc. These sensing functions make electronic skin have great application potential in human-machine interface, intelligent robot, bionic prosthesis and other intelligent systems . In addition, electronic skin also has functions such as biosensing, gas detection and proximity sensing that human skin does not have. Among them, proximity sensing is a non-contact detection function, which has similar functions to electronic eyes. This sensing can be used to help robots or blind people perceive the real world. On the one hand, it can recognize the distance and shape of obstacles, and feed back the results to robot...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01B7/00G01B7/28
CPCG01B7/003G01B7/28
Inventor 汤庆鑫童艳红刘益春赵晓丽吕广爽
Owner NORTHEAST NORMAL UNIVERSITY
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