Preparation scheme of novel high-transmittance vanadium dioxide thin film element

A technology of vanadium dioxide and high transmittance, which is applied in the field of physics, can solve the problems of low transmittance of thin films, achieve the effect of increasing transmittance, reducing dependence, and reducing the probability of defect generation

Pending Publication Date: 2020-03-20
SHENZHEN UNIV
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Problems solved by technology

[0004] To solve VO 2 The core problem of the low transmittance of the film itself, the present inve

Method used

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  • Preparation scheme of novel high-transmittance vanadium dioxide thin film element

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Example Embodiment

[0047] Example 1

[0048] This embodiment provides a vanadium dioxide double-layer membrane element. The vanadium dioxide double-layer membrane element includes a vanadium dioxide double-layer membrane system and an element substrate supporting the vanadium dioxide double-layer membrane system.

[0049] The specific steps of the preparation method of the vanadium dioxide double-layer membrane element are as follows:

[0050] Step 1. Theoretical design optimizes the spectral performance of the vanadium dioxide double-layer film system

[0051] The existing film analysis software is used to analyze the influence trend and change law of the sputtering process parameters on the properties of the graded refractive index material and the properties of the vanadium dioxide thin film, so as to evaluate the process preparation tolerance; The required refractive index distribution of the graded refractive index material thin film layer prepared by the process; on this basis, the vanadium dioxid...

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Abstract

The invention belongs to the field of physics, and particularly relates to a vanadium dioxide double-layer film system and a preparation method and application thereof. The double-layer film system comprises a vanadium dioxide thin film layer and a silicon oxide gradient refractive index material thin film layer, and the gradient refractive index material thin film and the vanadium dioxide thin film are sequentially stacked from bottom to top. According to the vanadium dioxide double-layer film system, a material silicon oxide with a gradient refractive index function is utilized, so that thevanadium dioxide double-layer film system element has the spectral characteristics of ultra-wide waveband, full solid angle, polarization insensitivity and high transmittance.

Description

technical field [0001] The invention belongs to the field of physics, and in particular relates to a vanadium dioxide double-layer film system and a preparation method and application thereof. Background technique [0002] VO 2 The thin film can instantaneously undergo a reversible phase transition between semiconductor and metal under different external excitation conditions. Before and after the phase transition, the crystal structure of the film changes from monoclinic to rutile, and the electrical conductivity, magnetic susceptibility, light absorption, refractive index, specific heat capacity and other properties of the film undergo a sudden change before and after the phase transition. VO 2 It has attracted much attention, not only because of its unique reversible MIT phase transition characteristics, but more importantly, VO 2 The phase transition temperature (68°C) is close to room temperature, so its practical potential is huge. VO 2 Thin film components can be...

Claims

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Application Information

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IPC IPC(8): G02B1/113C23C14/34C23C14/08
CPCG02B1/113C23C14/083C23C14/34
Inventor 靳京城张东平范平
Owner SHENZHEN UNIV
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