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an etching method

An over-etching, metal conductor technology, used in electrical components, circuits, semiconductor/solid-state device manufacturing, etc., can solve the problems of metal filler peeling, affecting the quality of metal wire channels and welding areas, and filling conductor resistance offset. , to reduce the adhesion, solve the peeling of metal fillers, and widen the discharge channel.

Active Publication Date: 2021-09-21
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the above two processes, problems such as the offset of the filled conductor resistance and the peeling off of the metal filler are prone to occur.
These conditions seriously affect the quality of the metal wire channel and welding area

Method used

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Embodiment 1

[0067] This embodiment provides an etching method, which includes the above steps S1-S3. Combine below Figure 3a-Figure 3d The specific description of each step is as follows:

[0068] Such as Figure 3a As shown, a substrate to be etched is formed in step S1 , and the substrate includes a metal conductor 101 , a dielectric layer 102 to be etched, a hard mask layer 103 and a patterned photoresist layer 104 . The dielectric layer 102 to be etched is located above the metal conductor 101 , the hard mask layer 103 is located above the dielectric layer 102 , and the photoresist layer 104 is located above the hard mask layer 103 . Wherein, the metal conductor 101 may be a metal wire layer including one or more layers of metal materials, or may be a functional layer containing metal materials for other purposes. The dielectric layer 102 to be etched may be an oxide layer as an insulating medium, or other functional dielectric layers. An anti-reflection layer 1021 is also provid...

Embodiment 2

[0075] This embodiment provides an etching method, which is substantially the same as that of Embodiment 2, and the difference lies in the specific parameters in step S3. In order to discharge metal by-products 105 more quickly and timely, this embodiment increases the N 2 flow, and adjust the pressure of the reaction chamber, thereby further increasing the air flow in the reaction chamber.

[0076] Specifically, when performing overetching to the metal conductor 101 in step S3, a protective gas N 2 , reaction gas CHF 3 、CF 4 and O 2 , where N 2 The flow rate is 200-600sccm, CHF 3 The flow rate is 180-400sccm, CF 4 The flow rate is 200-400sccm, O 2 The flow rate is 30-80sccm, the air pressure is 30-200mTorr, the output power of the main RF source is 500-1500W, the frequency is 60MHz, the output power of the bias RF source is 1000-2000W, the frequency is 13MHz, and the heating temperature is 30-45 ℃.

Embodiment 3

[0078] This embodiment provides an etching method, which includes steps S1-S3. Before etching the hard mask layer 103 and the dielectric layer 102, the photoresist layer 104 is subjected to plasma treatment to increase the size of the photoresist layer 104. The slope of the sidewall facilitates the discharge of metal by-products 105 generated by over-etching. Combine below Figure 4a-Figure 4c The specific description of each step is as follows:

[0079] Such as Figure 4a As shown, a substrate to be etched is formed in step S1 , and the substrate includes a metal conductor 101 , a dielectric layer 102 to be etched, a hard mask layer 103 and a patterned photoresist layer 104 . The dielectric layer 102 to be etched is located above the metal conductor 101 , the hard mask layer 103 is located above the dielectric layer 102 , and the photoresist layer 104 is located above the hard mask layer 103 . An anti-reflection layer 1021 is also provided between the metal conductor 101 a...

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Abstract

The invention provides an etching method, comprising the following steps: sequentially forming an anti-reflection layer, a dielectric layer, a hard mask layer and a patterned photoresist layer on a metal conductor; The mask layer and the dielectric layer, and make the first etched sidewall of the hard mask layer and the second etched sidewall of the dielectric layer form a smooth and continuous slope surface; and etch the antireflection layer and overetch the metal conductor . The invention proposes a method for discharging the metal by-products produced by etching during the etching process, which improves the etching morphology of the metal channel, so that when the metal conductor is subsequently filled in the channel, the filled metal conductor can be in contact with the side wall of the channel The tight fit solves the problems of metal channel resistance offset and metal filling peeling off.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to an etching method. Background technique [0002] Metal wire channels are currently used in the manufacture of integrated circuits for internal circuit connections. In order to connect metal wires, channel etching is required, and metal conductors are filled in the etched channels to achieve the effect of circuit connection. [0003] Laser repair processes are currently used for circuit repair in integrated circuit manufacturing. The laser repair process uses a laser to cut a fuse in the circuit to change the decoding circuit, so that the defective memory unit is replaced by a backup circuit. The structure of the laser repair process can be divided into a welding area and a fuse area. In the welding area, metal channels need to be etched, and metal conductors are filled in the etched channels to form welding pads. [0004] However, in the above two manufacturing ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/48
CPCH01L21/4846H01L21/4864
Inventor 不公告发明人
Owner CHANGXIN MEMORY TECH INC
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