A high-quality gallium oxide thin film and its homoepitaxial growth method
A technology of epitaxial growth and growth method, which is applied in the field of preparation of semiconductor thin film materials, can solve the problems of poor quality of homogeneous epitaxial growth crystals, and achieve the effect of improving the quality of thin film crystals, improving work performance, and simple process
Active Publication Date: 2022-03-25
JILIN UNIV
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Problems solved by technology
[0004] Purpose of the present invention is exactly to solve above-mentioned Ga 2 o 3 The problem of poor quality of homoepitaxially grown crystals provides a high-quality Ga 2 o 3 Thin film and its homoepitaxial growth method
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Embodiment 1
[0019] A high quality Ga 2 o 3 The growth process of homoepitaxial growth thin film material, the schematic diagram of its structure is as follows figure 1 As shown, followed by β-Ga 2 o 3 Single crystal substrate 1, β-Ga 2 o 3Low temperature Ga grown epitaxially on single crystal substrate 1 2 o 3 Thin film layer 2, at low temperature Ga 2 o 3 Temperature Gradient Ga for Epitaxial Growth on Thin Film Layer 2 2 o 3 Thin film layer 3, at temperature gradient Ga 2 o 3 Epitaxially grown high temperature Ga on thin film layer 3 2 o 3 Thin film layer 4 composition.
[0020] A high quality Ga 2 o 3 The homoepitaxial growth method of thin film material, its step is as follows:
[0021] The substrate used for epitaxial growth is melt-guided mode method [1] Preparation of High Quality β-Ga 2 o 3 The single crystal substrate 1 has a thickness of 1000 μm. Then β-Ga 2 o 3 The single crystal substrate 1 was cleaned with toluene, acetone, ethanol and deionized water i...
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Abstract
A high-quality gallium oxide (Ga 2 o 3 ) thin film and a homoepitaxial growth method thereof, belonging to the technical field of semiconductor thin film material preparation. β‑Ga 2 o 3 Single crystal substrate, low temperature Ga 2 o 3 Thin film layer, temperature gradient Ga 2 o 3 Thin film layer and high temperature Ga 2 o 3 Composition of film layers. Each Ga 2 o 3 The thin film layers are obtained by epitaxial growth of high temperature MOCVD process. low temperature Ga 2 o 3 Thin film layer with β‑Ga 2 o 3 The single crystal is used as the substrate, which avoids the lattice mismatch between the substrate and the thin film, and at the same time inserts the temperature gradient Ga 2 o 3 The thin film layer can reduce the influence of defects in the single crystal substrate on the film, and suppress the generation of defects in the process of epitaxial growth of the film, thereby effectively improving the quality of the film crystal. The invention solves the problem of high-quality Ga 2 o 3 The problem of epitaxial growth of thin film materials overcomes the current Ga 2 o 3 The poor quality of heterogeneous and homoepitaxially grown crystals affects Ga 2 o 3 Based on the performance of power devices, for the future Ga 2 o 3 It lays a solid foundation for the preparation of basic power devices.
Description
technical field [0001] The invention belongs to the technical field of preparation of semiconductor thin film materials, in particular to a high-quality gallium oxide (Ga 2 o 3 ) film and its homoepitaxial growth method. Background technique [0002] Gallium oxide (Ga 2 o 3 ) is a direct bandgap wide bandgap semiconductor material, the bandgap width is 4.2-5.3eV (different crystal structure, optical anisotropy performance), the most stable phase is monoclinic β-Ga 2 o 3 structure. Compared with other mainstream semiconductor materials, β-Ga 2 o 3 (hereinafter referred to as Ga 2 o 3 ) has many unique physical properties: first, Ga 2 o 3 With an ultra-large band gap of about 4.9eV, it has excellent chemical and thermal stability and high UV-visible light transmittance. At the same time, the material is easy to obtain excellent n-type conductivity, which can meet the requirements of transparent conductive electrodes at the same time. Electrical conductivity and hig...
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IPC IPC(8): H01L21/02
CPCH01L21/02414H01L21/02433H01L21/02565H01L21/0259H01L21/0262
Inventor 董鑫张源涛李赜明张宝林焦腾李万程
Owner JILIN UNIV