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Preparation method of ohmic contact transparent electrode on p-type GaN

A technology of ohmic contact and transparent electrodes, applied in the manufacture of circuits, electrical components, final products, etc., can solve the problems of high film cost and achieve the effects of reduced production costs, stable performance, and convenient application

Active Publication Date: 2020-04-03
SUZHOU INSTITUE OF WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are many methods to study the preparation of AZO electrodes, including magnetron sputtering, pulsed laser deposition, electron beam evaporation, etc., but the cost of preparing thin films by these methods is relatively high, including equipment cost and raw material cost

Method used

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  • Preparation method of ohmic contact transparent electrode on p-type GaN
  • Preparation method of ohmic contact transparent electrode on p-type GaN
  • Preparation method of ohmic contact transparent electrode on p-type GaN

Examples

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Embodiment 1

[0029] Synthesis of zinc precursor solution: 2.2 grams of zinc acetate dihydrate and 3 grams of PEI (polyethyleneimine) were mixed in every 40 milliliters of deionized water, and stirred for more than 30 minutes to make them evenly mixed. Then add 4 grams of EDTA (ethylenediaminetetraacetic acid), and stir for more than 30 minutes to make it evenly mixed to form a zinc precursor solution, which is designated as solution A. Solution A is subjected to ultrafine filtration to remove acetate ions therein to obtain colloid A.

[0030] Synthesis of aluminum precursor solution: 3.7 grams of aluminum nitrate nonahydrate and 3 grams of PEI were added in every 40 milliliters of deionized water, and stirred evenly. Then add 4 grams of EDTA and stir evenly, and at the same time slowly add 10% ammonia water to make the pH of the solution 8 to form an aluminum precursor solution, which is designated as solution B. The solution B is ultra-finely filtered to remove nitrate ions therein to ob...

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Abstract

The invention provides a preparation method of an ohmic contact transparent electrode material on p-type GaN. According to the method, an Al-doped ZnO thin film is grown by adopting a polymer assisteddeposition method, and then annealing treatment is adopted to obtain a required AZO electrode layer thin film. The growth method of an electrode layer film is simple and low in cost, and the electrode layer film can be grown in a large area, can form good ohmic contact with p-type GaN, and has the advantages of being small in resistivity and high in light transmittance.

Description

technical field [0001] The invention relates to a preparation method of an ohmic contact transparent electrode on p-type GaN. Background technique [0002] The third-generation semiconductors represented by Group III nitrides (that is, wide-bandgap semiconductors with a bandgap greater than 2.2eV) have great application prospects, and GaN materials have been widely used in the field of optoelectronic devices. In order to prepare high-performance devices, an electrode layer that forms an ohmic contact with the GaN material is very necessary. A good ohmic contact can effectively reduce the series resistance in the device, thereby reducing the turn-on voltage and operating current of the device, reducing the heating of the device, and improving the performance of the device. However, since the top of the valence band of p-type GaN is far away from the vacuum level (7.4eV), it is difficult for ordinary conductive materials to achieve such a high work function. Once the work fun...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/288
CPCH01L21/02697H01L21/288Y02P70/50
Inventor 吴昊苏曦刘昌
Owner SUZHOU INSTITUE OF WUHAN UNIV