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Large-area high-quality graphene lossless transfer method based on doping layer assistance

A transfer method, single-layer graphene technology, applied in the direction of single-layer graphene, graphene, chemical instruments and methods, etc., can solve problems such as poor electrical performance, graphene material contamination, film damage, etc., to achieve low cost, Simple operation, powerful function effect

Inactive Publication Date: 2020-04-07
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Abstract
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Problems solved by technology

[0012] The object of the present invention is to aim at the above-mentioned defect of prior art, provide a kind of large-area high-quality graphene non-destructive transfer method based on doping layer assistance, utilize doping material simultaneously as the protective layer and doping layer of graphene transfer, solve Solved many problems in the existing graphene transfer technology, such as graphene material contamination, film damage, poor electrical performance, etc.

Method used

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  • Large-area high-quality graphene lossless transfer method based on doping layer assistance

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preparation example Construction

[0051] The present invention also provides a method for preparing a large-area high-quality multilayer graphene film, such as image 3 , 4 As shown, on the basis of the preparation of the above-mentioned large-area high-quality single-layer graphene film containing a doped layer, the following steps are also included:

[0052] S6, preparation of large-area high-quality multilayer graphene film: repeat the steps S1-S5 multiple times, stack multiple graphene / doped layers on the target substrate 5 in sequence, and obtain a transferred layer by layer Doped large-area high-quality multilayer graphene films.

[0053] Among them, the number of layers of the large-area high-quality multilayer graphene film doped layer by layer can be designed, and can be flexibly adjusted according to actual needs; the thickness and type of each doped layer can be independently designed, which can realize multilayer graphene Gradient doping of thin films or sudden doping of P-type / N-type alternately...

Embodiment 1

[0060] Process parameter selection: the catalytic metal substrate 1 is polycrystalline Cu foil; the doped layer 3 is made of perfluorosulfonic acid PFSA, which is prepared by solution spin coating with a concentration of 5 mg / ml; the support layer 4 is thermal release tape TRT; the target The substrate 5 is glass. A large-area high-quality single-layer graphene film non-destructive transfer method containing a perfluorosulfonic acid PFSA doped layer, comprising the following steps:

[0061] S1. A low-pressure CVD system is used to grow a single-layer graphene 2 film on Cu. The 25um thick polycrystalline Cu foil 1 is cleaned in 10% hydrochloric acid to remove the oxide layer; the CVD chamber is evacuated to 50mTorr, and the 2 and 10sccmAr atmosphere to 1000°C; high temperature annealing of polycrystalline Cu foil for 1 30min to improve its crystal quality; stepwise introduction of CH 4 (3sccm-20min&6sccm-60min) grow graphene film 2, control the nucleation point density of grap...

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Abstract

The invention provides a large-area high-quality graphene lossless transfer method based on doping layer assistance, and relates to the technical field of application of two-dimensional materials. Thelarge-area high-quality graphene lossless transfer method comprises: growth of a single-layer graphene film, generation of a doping layer, attachment of a supporting layer, removal of a catalytic metal substrate and transfer of the graphene film. According to the invention, the doped material is used as the protective layer and the doped layer of graphene transfer, so that the problems of graphene material contamination, film damage, poor electrical properties and the like in the existing graphene transfer technology are solved, and the operation can be repeated to prepare the layer-by-layerdoped large-area high-quality multilayer graphene film through transfer; and with the method, it is guaranteed that the graphene film released to the target substrate has continuous surface morphologyand a complete two-dimensional structure while the work function and the conductivity of graphene are improved.

Description

technical field [0001] The invention relates to the technical field of application of two-dimensional materials, in particular to a large-area high-quality graphene non-destructive transfer method based on doping layer assistance. Background technique [0002] Graphene, as a two-dimensional film material with a single atomic layer thickness, has high transparency (≈97.7%), good conductivity (theoretical conductivity is better than Ag) and excellent mechanical flexibility, and can be used as an ideal transparent conductive electrode for Various fields of optoelectronic devices, such as: light-emitting diodes (LEDs), solar cells (SCs), field-effect transistors (FETs), ultraviolet / infrared detectors and supercapacitors, etc. In addition, graphene materials also have high thermal conductivity (5×10 3 w -1 K -1 ) and mechanical strength (1TPa), while showing good stability in high temperature atmosphere and harsh chemical environment. Based on this, graphene can be used as a ...

Claims

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Application Information

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IPC IPC(8): C01B32/186C01B32/194
CPCC01B2204/02C01B32/186C01B32/194
Inventor 黎大兵陈洋孙晓娟贾玉萍蒋科石芝铭
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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