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A preparation method of liquid-phase silicon-assisted forming thermal protection z-pins silicide ceramic rod structure

A technology of silicide and ceramic rod, which is applied in the field of preparation of liquid-phase silicon-assisted forming thermal protection Z-pins silicide ceramic rod structure

Active Publication Date: 2021-04-06
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, no researchers at home and abroad have considered the influence of Z-pins on the substrate from the perspective of anti-ablation performance.

Method used

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  • A preparation method of liquid-phase silicon-assisted forming thermal protection z-pins silicide ceramic rod structure
  • A preparation method of liquid-phase silicon-assisted forming thermal protection z-pins silicide ceramic rod structure
  • A preparation method of liquid-phase silicon-assisted forming thermal protection z-pins silicide ceramic rod structure

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0140] 2) For a thickness of 10mm and a diameter of The cylinder of C / C-ZrC-SiC composite material is punched; the punching equipment adopts a vertical machining center (JASU V-850); the hole diameter is 2.0mm, the hole depth is 6mm, and the number of holes is 29. The distribution density is 10%.

[0141] 2) Pretreat the refractory metal vanadium powder and high-purity carbon powder; select refractory metal vanadium powder with a particle size of 50 μm and a purity greater than 99.9% (Beijing Xingrongyuan Technology Co., Ltd.), high-purity carbon powder 10 %, particle size 100nm purity greater than 99.99% (Beijing Rongyuan Technology Co., Ltd.), the added high-purity carbon powder is 10% of the total metal powder atomic ratio, and the selected powder is added with 5% liquid paraffin as a forming agent (Sinopharm Group Chemical Reagent Co., Ltd.), pour absolute ethanol as the ball milling medium, use a planetary ball mill to wet-grind the metal powder and liquid paraffin unde...

Embodiment 2

[0162] 3) For a thickness of 10mm and a diameter of The cylinder of C / C-ZrC-SiC composite material is punched; the punching equipment adopts a vertical machining center (JASU V-850); the hole diameter is 2.0mm, the hole depth is 6mm, and the number of holes is 29. The distribution density is 10%.

[0163] 2) Pretreat the refractory metal vanadium powder; select the powder with a particle size of 50 μm and a purity greater than 99.9% (Beijing Xingrongyuan Technology Co., Ltd.); and add 2% liquid paraffin to the selected powder as a forming agent (Sinopharm Group Chemical Reagent Co., Ltd.), pour absolute ethanol as the ball milling medium, use a planetary ball mill to wet-grind the metal powder and liquid paraffin under the protection of argon for 12 hours until uniform, and then dry it in a vacuum oven for 12 hours before use;

[0164] 3) Manually filling the prepared refractory metal vanadium powder into the blind hole of the substrate and compacting it;

[0165] 4) Put th...

Embodiment 3

[0175] 4) For a thickness of 10mm and a diameter of The cylinder of C / C-ZrC-SiC composite material is punched; the punching equipment adopts a vertical machining center (JASU V-850); the hole diameter is 2.0mm, the hole depth is 6mm, and the number of holes is 29. The distribution density is 10%.

[0176] 2) Pretreat the refractory metal zirconium powder; select the powder with a particle size of 50 μm and a purity greater than 99.9% (Beijing Xingrongyuan Technology Co., Ltd.); and add 5% liquid paraffin to the selected powder as a forming agent (Sinopharm Group Chemical Reagent Co., Ltd.), pour absolute ethanol as the ball milling medium, use a planetary ball mill to wet-grind the metal powder and liquid paraffin under the protection of argon for 12 hours until uniform, and then dry it in a vacuum oven for 12 hours before use;

[0177] 3) Manually filling the prepared refractory metal zirconium powder into the blind hole of the substrate and compacting it;

[0178] 4) Putt...

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Abstract

The invention discloses a method for preparing a thermally protective Z-pins silicide ceramic rod structure assisted by liquid phase silicon, in which a porous refractory metal rod is formed in a longitudinal blind hole of a carbon-ceramic composite material, and then siliconized through a liquid phase Reaction, that is, obtain the Z-pins silicide ceramic rod reinforced carbon-ceramic composite material; the refractory metal is selected from at least one of Zr, V, Hf, Ti, Th. The Z-pins silicide ceramic rod structure of the present invention will be oxidized into the following two types of oxides under high temperature environment: one is high melting point metal oxide (melting point 1700~2700 ℃), mainly composed of Zr, V, Hf, Ti , Th refractory metal formed single, binary or multiple oxides, the second is low melting point oxides such as (SiO 2 and WO 3 ); Through the different oxidation mechanisms and compensation mechanisms of these two types of metal oxides, the ablation resistance of carbon-ceramic composites is finally greatly improved.

Description

technical field [0001] The invention relates to a method for preparing a thermal protection type Z-pins silicide ceramic rod structure aided by liquid phase silicon, and belongs to the technical field of composite material preparation. Background technique [0002] With the rapid development of aerospace technology, hypersonic vehicles have become the focus of aerospace research at this stage. However, due to its extremely fast flight speed as high as Mach number 5 or more, and the strong aerodynamic heating and high-speed particle erosion on the surface, the surface temperature of some parts is as high as 2000 °C or more. Then the requirements for the temperature resistance limit of the material, high temperature oxidation resistance and strength and toughness under high-speed air flow will be more stringent. Furthermore, very few components maintain structural and dimensional integrity in such a harsh oxidizing convective environment. Therefore, designing and preparing t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/565C04B35/65C04B35/56C04B35/52C04B35/83
CPCC04B35/52C04B35/5622C04B35/565C04B35/65C04B35/83C04B2235/3891C04B2235/404C04B2235/6562
Inventor 孙威田甜熊翔张红波陈招科卿馨
Owner CENT SOUTH UNIV
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