GaN-based lateral super junction device and manufacturing method thereof
A technology of superjunction device and fabrication method, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems that GaAs power devices cannot meet technological development, narrow band gap, and low breakdown electric field, etc. Small on-resistance, high breakdown voltage and good repeatability
Pending Publication Date: 2020-04-07
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Abstract
The invention discloses a GaN-based lateral super junction device and a manufacturing method thereof. The lateral super-junction device comprises a heterojunction, a source electrode, a drain electrode and a grid electrode whic are matched with the heterojunction, the heterojunction comprises a first semiconductor and a second semiconductor, the second semiconductor is formed on the first semiconductor, two-dimensional electron gas is formed in the heterojunction, and the source electrode and the drain electrode are electrically connected through the two-dimensional electron gas. The GaN-basedlateral super junction device further comprises a plurality of P-type semiconductors arranged at intervals, and the P-type semiconductors are distributed below the grid electrode. The P-type semiconductors are formed on the first semiconductor, and the source electrode or the drain electrode is connected or not connected with the P-type semiconductors, or the P-type semiconductors are formed on the second semiconductor, and a high-resistance semiconductor is further formed between every two adjacent P-type semiconductors and between the P-type semiconductors and any one of the source electrode and the drain electrode. The GaN-based lateral super junction device provided by the invention is high in breakdown voltage and small in specific on-resistance; and moreover, the manufacturing process is simple and the repeatability is good.
Application Domain
Semiconductor/solid-state device manufacturingSemiconductor devices
Technology Topic
EngineeringElectrical connection +6
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PUM
Property | Measurement | Unit |
Thickness | 10.0 | nm |
Thickness | 100.0 | nm |
Thickness | 100.0 | µm |
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