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GaN-based lateral super junction device and manufacturing method thereof

A technology of superjunction device and fabrication method, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems that GaAs power devices cannot meet technological development, narrow band gap, and low breakdown electric field, etc. Small on-resistance, high breakdown voltage and good repeatability

Pending Publication Date: 2020-04-07
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the first generation of Si semiconductor power devices has achieved remarkable results, its performance is currently close to the theoretical limit of the material. In addition, with the increasing requirements for frequency and power, the second generation of GaAs semiconductor materials due to their narrow bandgap , low breakdown electric field and other factors, resulting in GaAs power devices can not meet the existing technology development
The structure of a lateral super junction field effect transistor in the prior art is as follows figure 1 As shown, this structure can effectively improve the breakdown voltage of the device and reduce the on-resistance compared with traditional MOS devices, but the breakdown voltage of about 250V is still low

Method used

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  • GaN-based lateral super junction device and manufacturing method thereof
  • GaN-based lateral super junction device and manufacturing method thereof
  • GaN-based lateral super junction device and manufacturing method thereof

Examples

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Embodiment 1

[0131] see Figure 2a , Figure 2b , a GaN-based lateral superjunction device, which includes a substrate 1, a buffer layer 2 disposed on the substrate 1, a heterojunction disposed on the buffer layer 2, the heterojunction includes a first semiconductor 3 and a second semiconductor 4. The second semiconductor 4 is formed on the first semiconductor 3, and a two-dimensional electron gas is formed between the first semiconductor and the second semiconductor; a source 7, a drain 8, and a gate 9 are arranged on the heterojunction, The source electrode 7 and the drain electrode 8 are all arranged on the second semiconductor 4, and the source electrode and the drain electrode are electrically connected through the two-dimensional electron gas, and the second semiconductor 4 is also provided with a plurality of P-type semiconductors 5 oriented The P-type semiconductor array formed by arrangement, the two ends of the P-type semiconductor 5 point to the source 7 and the drain 8 respect...

Embodiment 2

[0133] A fabrication process of a GaN-based lateral superjunction device may include the following steps:

[0134] 1) using metal organic chemical vapor deposition (MOCVD) method to grow such as image 3 In the material structure shown, the substrate is made of Si with a thickness of 400 μm, and the buffer layer is made of high-resistance GaN with a thickness of 4.2 μm; in the AlGaN / GaN heterostructure, the thickness of GaN is 260 nm, the thickness of AlGaN is 18 nm, and the Al component content is 18 nm. %; The P-type semiconductor is made of P-GaN material, and the thickness of P-GaN is 70nm;

[0135] 2) Use inductively coupled plasma to etch the P-GaN layer in the ohmic region, and then use electron beam evaporation technology to deposit Ti / Al / Ni / Au four-layer metal and layer it on N 2 Annealed at 875°C for 30s under the same conditions, the structure of the formed material is as follows Figure 4 shown;

[0136] 3) Use hydrogen plasma to treat part of P-GaN to form high...

Embodiment 3

[0139] see Figure 7a , Figure 7b , a GaN-based lateral superjunction device, which includes a substrate 1, a buffer layer 2 disposed on the substrate 1, a heterojunction disposed on the buffer layer 2, the heterojunction includes a first semiconductor 3 and a second semiconductor 4. The second semiconductor 4 is formed on the first semiconductor 3, and a two-dimensional electron gas is formed between the first semiconductor and the second semiconductor; a source 7, a drain 8, and a gate 9 are arranged on the heterojunction, The source and the drain are electrically connected through the two-dimensional electron gas, and a P-type semiconductor array formed by a plurality of P-type semiconductors 5 is arranged on the first semiconductor 3. The two P-type semiconductor arrays The terminals point to the source 7 and the drain 8 respectively, the source 7 and the drain 8 are connected to the second semiconductor 4, the gate 9 is located between the source 7 and the drain 8, and ...

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Abstract

The invention discloses a GaN-based lateral super junction device and a manufacturing method thereof. The lateral super-junction device comprises a heterojunction, a source electrode, a drain electrode and a grid electrode whic are matched with the heterojunction, the heterojunction comprises a first semiconductor and a second semiconductor, the second semiconductor is formed on the first semiconductor, two-dimensional electron gas is formed in the heterojunction, and the source electrode and the drain electrode are electrically connected through the two-dimensional electron gas. The GaN-basedlateral super junction device further comprises a plurality of P-type semiconductors arranged at intervals, and the P-type semiconductors are distributed below the grid electrode. The P-type semiconductors are formed on the first semiconductor, and the source electrode or the drain electrode is connected or not connected with the P-type semiconductors, or the P-type semiconductors are formed on the second semiconductor, and a high-resistance semiconductor is further formed between every two adjacent P-type semiconductors and between the P-type semiconductors and any one of the source electrode and the drain electrode. The GaN-based lateral super junction device provided by the invention is high in breakdown voltage and small in specific on-resistance; and moreover, the manufacturing process is simple and the repeatability is good.

Description

technical field [0001] The invention particularly relates to a GaN-based lateral superjunction device and a manufacturing method thereof, belonging to the field of electronic science and technology. Background technique [0002] Power semiconductor devices are semiconductor devices that process electrical energy (power). Field-controlled power devices represented by power MOS devices and insulated gate bipolar transistors (IGBTs) have developed into the main devices of power semiconductors. [0003] Breakdown voltage V br and specific on-resistance R on It is the most important electrical parameter of power semiconductor devices. Edge termination technology (or junction termination technology) and RESURF (Reduced Surface Field) are two basic technologies, both of which are effective in improving surface field distribution to increase withstand voltage. However, with the development of power semiconductor technology, the problem of field distribution in power semiconductor...

Claims

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Application Information

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IPC IPC(8): H01L29/778H01L21/335
CPCH01L29/7786H01L29/66462
Inventor 张晓东张辉张佩佩于国浩张宝顺
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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