Multistage coupling gate tunneling field effect transistor and manufacturing method thereof

Abstract

The invention discloses a multistage coupling gate tunneling field effect transistor and a manufacturing method thereof. The invention discloses the multistage coupling gate tunneling field effect transistor. The problem of bipolar off-state electric leakage of an existing tunneling field effect transistor is mainly solved. A substrate (1) is arranged at the bottom. A source region (3), a body region (2) and a drain region (4) are sequentially arranged at the upper part of the substrate (1) from left to right. A drain electrode (5) is arranged at the right upper part of the drain region (4). Asource electrode (6) is arranged at the left upper part of the source region (3). A gate dielectric layer (7) is arranged above the body region (2). Multiple stages of coupling gates (8) which are distributed at intervals are arranged above the gate dielectric layer (7). A passivation layer (9) is arranged on the periphery of the source region (3), the drain region (4), the drain electrode (5), the source electrode (6), the gate dielectric layer (7) and multiple stages of coupling gates (8). According to the invention, the bipolar off-state electric leakage problem of the device is reduced; the switching speed of the device is improved; the power consumption of the device is reduced; the reliability of the device is improved; and the device can be applied to a low-power-consumption electronic system.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and particularly relates to a tunneling field effect transistor, which can be used in a low power consumption circuit system. [0002] technical background [0003] The rapid development of semiconductor technology has promoted the integration level of integrated circuit chips to double every 2 to 3 years, bringing about a huge leap in chip performance. However, with the further reduction of device size, the problem of static power consumption and switching power consumption of traditional MOSFET devices is becoming more and more significant, which cannot fully meet the requirements of future low power consumption applications and energy saving and environmental protection. As a new type of low-power semiconductor device that is expected to replace traditional MOSFET devices, tunneling field-effect transistors (TFETs) are based on quantum band-band tunneling mechanism, which can achieve s...

AI Technical Summary

Problems solved by technology

This kind of device has inherent defects in the structure, that is, there is a strong electric field peak at the edge of the gate near the drain when the device is working under negative pressure, which will cause serious bipolar off-state leakage problems and eventually lead to device performance degradation. Reliable performance decreases, power consumption increases

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