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Tunneling field effect device based on overlapping coupling plate and manufacturing method

A tunneling field effect and coupling plate technology, applied in the field of microelectronics, can solve problems such as reliability decline, power consumption increase, device performance degradation, etc., to suppress bipolar off-state leakage, avoid random impurity fluctuations, and improve device performance. The effect of reliability

Inactive Publication Date: 2020-04-24
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] 1. Due to the inherent defects in the structure of the device, there is a strong electric field peak at the edge of the gate near the drain when the device is working under negative pressure, which leads to serious bipolar off-state leakage problems
2. The device usually uses traditional ion implantation physical doping technology to achieve device source and drain doping, which will cause random impurity fluctuations in the device
These problems will lead to device performance degradation, reduced reliability, and increased power consumption

Method used

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  • Tunneling field effect device based on overlapping coupling plate and manufacturing method
  • Tunneling field effect device based on overlapping coupling plate and manufacturing method
  • Tunneling field effect device based on overlapping coupling plate and manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] Embodiment 1: The number of coupling blocks is made to be 1, P-type In x Ga 1-x N graded polarization layer 3 components graded range is x=0.5~0.3, N type In y Ga 1-y A tunneling field effect device based on overlapping coupling plates with 4 components of the N graded polarization layer having a graded range of y=0.1-0.2.

[0052] Step 1. Select silicon semiconductor material as substrate 1, such as image 3 a.

[0053] Step 2. Fabricate a GaN-based buffer layer 2 on the substrate 1, such as image 3 b.

[0054]On the substrate 1, the unintentionally doped GaN semiconductor material with a thickness of 500 nm in the [0001] crystal direction is epitaxially formed by metal-organic chemical vapor deposition technology to form a GaN-based buffer layer 2, wherein the process conditions used for the epitaxy are: the temperature is 950°C, the pressure is 40 Torr, the flow rate of hydrogen gas is 4000 sccm, the flow rate of ammonia gas is 4000 sccm, and the flow rate of ...

Embodiment 2

[0077] Embodiment 2: The number of coupling blocks made is 2, P-type In x Ga 1-x N graded polarization layer 3 components graded range is x=0.5~0.1, N type In y Ga 1-y The N graded polarization layer 4 is a tunneling field effect device based on overlapping coupling plates with a graded range of y=0.1-0.5.

[0078] Step 1. Select sapphire semiconductor material as substrate 1, such as image 3 a.

[0079] Step 2. Fabricate a GaN-based buffer layer 2 on the substrate 1, such as image 3 b.

[0080] Using metal organic chemical vapor deposition technology on the substrate 1 under the process conditions of temperature 950°C, pressure 40Torr, hydrogen gas flow rate 4000 sccm, ammonia gas flow rate 4000 sccm, gallium source flow rate 100μmol / min, the epitaxial thickness is 750nm The GaN semiconductor material is unintentionally doped with the [0001] crystal orientation to form the GaN-based buffer layer 2 .

[0081] Step 3. Make P-type In x Ga 1-x N graded polarization lay...

Embodiment 3

[0103] Embodiment 3: The number of coupling blocks made is 3, P-type In x Ga 1-x N graded polarization layer 3 components graded range is x=1~0, N type In y Ga 1-y The N graded polarization layer 4 is a tunneling field effect device based on overlapping coupling plates with a graded composition range of y=0-0.9.

[0104] Step A. Select silicon carbide semiconductor material as substrate 1, such as image 3 a.

[0105] Step B. Fabricate a GaN-based buffer layer 2 on the substrate 1, such as image 3 b.

[0106] On the substrate 1, the unintentionally doped GaN semiconductor material with a thickness of 1000nm in the [0001] crystal direction is epitaxially formed by metal-organic chemical vapor deposition technology to form a GaN-based buffer layer 2,

[0107] Among them, the process conditions used for epitaxy are:

[0108] The temperature is 950°C, the pressure is 40Torr,

[0109] The hydrogen flow rate is 4000 sccm, the ammonia gas flow rate is 4000 sccm, and the gall...

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Abstract

The invention discloses a tunneling field effect device based on an overlapping coupling plate. The problems of random impurity fluctuation and bipolar off-state electric leakage of an existing deviceare mainly solved. The device comprises a substrate (1), a GaN-based buffer layer (2) and a P-type In<x> Ga<1-x> N gradient polarization layer (3) from bottom to top. An N-type In<y> Ga <1-y> N gradient polarization layer (4) is arranged on the upper right portion of the gradient polarization layer (3), and lower steps (5) are etched on the two sides of the gradient polarization layer. The leftand right sides of the lower steps are provided with a source electrode (7) and a drain electrode (6).A gate dielectric layer (8) is arranged at the upper parts of the two gradient polarization layers(3) and (4). A modulation gate (10), a gate (9), an overlapping plate (11) and an overlapping coupling plate (12) are sequentially arranged on the gate dielectric layer from left to right. The upperportions of the modulation gate (10), the gate (9), the overlapping plate (11) and the overlapping coupling plate (12) are covered with passivation layers (13). Random impurity fluctuation is avoided,and bipolar off-state electric leakage is reduced. The device can be applied to low-power-consumption electronic systems.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and particularly relates to a tunneling field effect device, which can be used in a low power consumption circuit system. [0002] technical background [0003] At present, global environmental pollution and energy shortages have become one of the most important problems restricting the sustainable development of human beings. Vigorously researching and developing new low-power semiconductor devices to significantly reduce the power consumption of integrated circuit chips and electronic systems is one of the effective ways to solve this problem. Tunneling Field Effect Transistor (TFETs) is one of the new semiconductor devices with great potential. [0004] Krishnendu Ghosh et al. first proposed an InN-based tunneling field-effect transistor. This device is based on a quantum band-band tunneling mechanism, which can achieve a steeper sub-threshold slope, and has fast switching speed and s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/423H01L21/336H01L29/06
CPCH01L29/0603H01L29/42364H01L29/66477H01L29/78
Inventor 毛维何元浩高北鸾杜鸣马佩军张进成郝跃
Owner XIDIAN UNIV
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