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Solar cell for all-black crystalline silicon photovoltaic module and preparation method of solar cell

A solar cell and photovoltaic module technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the film thickness and refractive index differences, tubular PERC solar cells cannot meet the requirements of the appearance of all black photovoltaic modules, and the appearance is uneven, etc. problem, to achieve the effect of reducing reflectivity, good passivation and reducing reflectivity, eliminating unevenness

Pending Publication Date: 2020-05-05
GUANGDONG AIKO SOLAR ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The reference file adopts the stacked setting of SiOx / SiNx / SiONx / SiOx, and the SiOx layer is in contact with the silicon wafer substrate, and the refractive index of the four-layer passivation film increases first and then decreases, and is affected by the film thickness After the positive film is coated on the battery sheet, the film thickness and refractive index will be different between the edge area and the central area of ​​the positive film, resulting in chromatic aberration, which will show obvious uneven appearance under the background of the black back plate material
[0005] The current tubular PERC solar cell design cannot meet the appearance requirements of all-black photovoltaic modules, so it is urgent to develop a tubular PERC solar cell manufacturing technology that can eliminate the color difference in the appearance of black modules

Method used

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  • Solar cell for all-black crystalline silicon photovoltaic module and preparation method of solar cell
  • Solar cell for all-black crystalline silicon photovoltaic module and preparation method of solar cell

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preparation example Construction

[0096] Correspondingly, the present invention discloses a method for preparing a solar cell for an all black crystal silicon photovoltaic module, including:

[0097] (1) Select p-type silicon wafers, and clean the silicon wafers;

[0098] Specifically, a low-reflectance textured surface is prepared on the surface of the silicon wafer by methods such as alkali texturing or ion etching, and the frontal reflectance after texturing is 8.5% to 11.0%;

[0099] (2) Carry out n-type layer diffusion to the silicon wafer after cleaning the texture;

[0100] Specifically, gas phase diffusion or ion implantation is used, and the resistance after diffusion is 100Ω / sq~150Ω / sq;

[0101] (3) Perform SE laser process on the front side of the silicon wafer to form front side selective doping;

[0102] Specifically, the front side laser is used to process the n-type diffusion layer to form front side selective doping, and the square resistance of the selective doping area is 70Ω / sq~100Ω / sq;

...

Embodiment 1

[0117] A solar cell for all-black crystal silicon photovoltaic modules, which sequentially includes a back silver electrode, a back aluminum film, a back composite film, a p-type silicon wafer, an n-type doped layer, a front composite film, and a front silver electrode from bottom to top,

[0118] Wherein, the front composite film includes a SiNx:Hy layer, a SiOxNy layer and a SiOx layer, the SiNx:Hy layer is connected to the n-type doped layer, and the SiOx layer is connected to the front silver electrode;

[0119] The SiNx:Hy layer is composed of 4 SiNx:Hy layers with different refractive indices and thicknesses, including the first SiNx:Hy layer, the second SiNx:Hy layer, the third SiNx:Hy layer and the fourth SiNx from bottom to top : Hy layer; the thickness of the first SiNx: Hy layer is 10nm, and the refractive index is 2.3; the thickness of the second SiNx: Hy layer is 12nm, and the refractive index is 2.16; the thickness of the third SiNx: Hy layer The thickness of the...

Embodiment 2

[0127] A solar cell for all-black crystal silicon photovoltaic modules, which sequentially includes a back silver electrode, a back aluminum film, a back composite film, a p-type silicon wafer, an n-type doped layer, a front composite film, and a front silver electrode from bottom to top,

[0128] Wherein, the front composite film includes a SiNx:Hy layer, a SiOxNy layer and a SiOx layer, the SiNx:Hy layer is connected to the n-type doped layer, and the SiOx layer is connected to the front silver electrode;

[0129] The SiNx:Hy layer is composed of 3 layers of SiNx:Hy layers with different refractive indices and thicknesses, including the first SiNx:Hy layer, the second SiNx:Hy layer, and the third SiNx:Hy layer from bottom to top; A SiNx:Hy layer has a thickness of 12nm and a refractive index of 2.25; the second SiNx:Hy layer has a thickness of 10nm and a refractive index of 2.15; the third SiNx:Hy layer has a thickness of 13nm and a refractive index of 2.10 .

[0130] The S...

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Abstract

The invention discloses a solar cell for an all-black crystalline silicon photovoltaic module and a preparation method of the solar cell. A front composite film is prepared by adopting tubular PECVD equipment and comprises a SiNx: Hy layer, a SiOxNy layer and a SiOx layer. The SiNx:Hy layer is connected with the n-type doped layer, and the SiOx layer is connected with a front silver electrode. TheSiNx: Hy layer is composed of 3 to 4 SiNx: Hy layers with different refractive indexes and thicknesses. The SiOxNy layer is composed of 2 to 3 SiOxNy layers with different refractive indexes and thicknesses. The SiOx layer is composed of 1 to 2 SiOx layers with different refractive indexes and thicknesses. By the adoption of the method, the requirement of the all-black crystalline silicon photovoltaic module can be completely met; the appearance color difference of the black module is remarkably eliminated; and the method can be applied to a traditional white backboard photovoltaic module.

Description

technical field [0001] The invention relates to the field of manufacturing solar cells, in particular to a solar cell used for all black crystal silicon photovoltaic components and a preparation method thereof. Background technique [0002] At present, distributed photovoltaic systems are developing rapidly, and distributed photovoltaic systems have more stringent requirements for photovoltaic modules. For example, distributed rooftop photovoltaic systems are increasingly required to use all-black photovoltaic modules based on the consideration of aesthetics and reducing light reflection. All-black photovoltaic modules use black materials as the backsheet, and the slight color difference of the cells will show obvious uneven appearance against the black backsheet material. Therefore, all-black photovoltaic modules put forward higher requirements for the manufacturing technology of photovoltaic cells. . [0003] At present, tubular PERC solar cells have become the mainstream...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/068H01L31/18
CPCH01L31/02168H01L31/0682H01L31/1804H01L31/1868Y02E10/546Y02E10/547Y02P70/50
Inventor 杨苏平周文远尧海华曾超林纲正陈刚
Owner GUANGDONG AIKO SOLAR ENERGY TECH CO LTD
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