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Graphene photoelectric detector with band-pass filtering from visible light to near-infrared light

A photodetector and bandpass filtering technology, applied in the field of photoelectric detection, can solve problems such as cost increase, and achieve the effect of improving absorption and photoresponsivity.

Active Publication Date: 2020-05-08
SHANGHAI NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The simplest single-cavity structure filter has a triangular passband shape, so multiple stacks are usually required to improve performance, and the cost is greatly increased

Method used

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  • Graphene photoelectric detector with band-pass filtering from visible light to near-infrared light
  • Graphene photoelectric detector with band-pass filtering from visible light to near-infrared light
  • Graphene photoelectric detector with band-pass filtering from visible light to near-infrared light

Examples

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Embodiment 1

[0034] A graphene photodetector with bandpass filtering in the visible to near-infrared band, such as figure 1 As shown, the detector includes a substrate 1 , a first film stack 2 , a photodetector layer, a silicon dioxide defect layer 5 and a second film stack 6 stacked sequentially from bottom to top, and the thickness of the resonant cavity is 175 nm.

[0035] The material of the substrate 1 is optical float glass.

[0036] The first membrane stack 2 includes alternately arranged niobium pentoxide layers and silicon dioxide layers, and the total number of layers in the first membrane stack 2 is 10 layers. The first film stack preparation method is to use ion source-assisted electron beam evaporation to alternately grow niobium pentoxide and silicon dioxide thin films in sequence. The thickness of each layer is controlled by a quartz crystal film thickness monitoring system. The thickness of the niobium pentoxide layer is 60.4nm , the thickness of the silicon dioxide layer ...

Embodiment 2

[0041] A graphene photodetector with bandpass filtering in the visible to near-infrared band, such as figure 1 As shown, the difference from Example 1 is that the thickness of the resonant cavity is 185nm.

Embodiment 3

[0043] A graphene photodetector with bandpass filtering in the visible to near-infrared band, such as figure 1 As shown, the difference from Example 1 is that the thickness of the resonant cavity is 190 nm.

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Abstract

The invention relates to a graphene photoelectric detector with a band-pass filtering function from a visible light band to a near-infrared band. The detector comprises a substrate (1), a first film stack (2), a photoelectric detector layer, a silicon dioxide defect layer (5) and a second film stack (6) which are sequentially stacked from bottom to top, wherein the thickness of the silicon dioxidedefect layer (5) is 100-775nm. Compared with the prior art, the graphene photoelectric detector has the advantages of high optical responsivity, easiness in compatibility with a modern integrated circuit, narrow-band filtering function from the visible light band to the near-infrared band and the like.

Description

technical field [0001] The invention relates to the photoelectric detection technology in the field, in particular to a graphene photodetector with a band-pass filtering function in the visible light to near-infrared band. Background technique [0002] Photodetectors are widely used in various fields of military and national economy. In the visible or near-infrared band, it is mainly used for ray measurement and detection, industrial automatic control, photometry, etc.; in the infrared band, it is mainly used for missile guidance, infrared thermal imaging, infrared remote sensing, etc. [0003] Graphene has a unique lattice and energy band structure, so it has the advantages of high carrier mobility, wide spectral response, fast response speed, etc., and has strong application potential in the field of photodetectors. Traditional graphene photodetectors are limited by the low absorption coefficient of the material itself, only 2.3%, resulting in an extremely weak photoelect...

Claims

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Application Information

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IPC IPC(8): H01L31/0232H01L31/028H01L31/09H01L31/101
CPCH01L31/02325H01L31/028H01L31/09H01L31/101
Inventor 刘锋曹峻赵炎亮胡耕涛杨建文曹铎石卉
Owner SHANGHAI NORMAL UNIVERSITY
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