A semiconductor light emitting element

A technology of light-emitting components and semiconductors, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as aggravating current congestion and chip burns, achieve performance improvement, reduce the impact of brightness, and avoid the effect of overall widening design

Active Publication Date: 2022-04-12
XIAMEN SANAN OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the light-emitting diode is just powered on, it will generate a transient high load current, which is more likely to aggravate the current crowding, and the chip burn is more likely to occur at the connection between the electrode lead connection section and the extension section

Method used

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  • A semiconductor light emitting element
  • A semiconductor light emitting element
  • A semiconductor light emitting element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] This embodiment provides the following semiconductor light emitting element, figure 2 It is a schematic cross-sectional view of a semiconductor light-emitting element, which includes: 1: substrate; 2: first conductivity type semiconductor layer; 3: active layer; 4: second conductivity type semiconductor layer; 5: current blocking layer; 6: transparent conductive layer ; 7: first electrode; 71, 72: first electrode lead; 8: second electrode; 81, 82, 83: second electrode lead; 9: insulating protective layer.

[0051] The substrate 1 can be an insulating substrate or a conductive substrate. Substrate 1 is a growth substrate for epitaxial growth of semiconductor barrier crystal stacks, including sapphire (Al 2 o 3 ) or spinel (MgA1 2 o 4 ) insulating substrates; silicon carbide (SiC), ZnS, ZnO, Si, GaAs, diamond; and oxide substrates such as lithium niobate and niobium gallate that match the nitride semiconductor lattice. The substrate 1 includes a first surface, a sec...

Embodiment approach

[0065] The second electrode 8 has a plurality of electrode leads, at least one second electrode lead, including a connection section connected to the second electrode, and an extension section extending from the connection section to the first electrode; the second electrode lead extends The segment has a first part extending from the second electrode lead connection segment to gradually approaching the first electrode and a second part extending from the first part gradually approaching the first electrode, and the width of the first part decreases gradually in the extending direction, so The width of the second part is fixed. As an embodiment of the present invention, the width of the first part of the second electrode extension section can be linearly narrowed at a fixed rate of change from the extension direction, such as image 3 As shown in a; as another embodiment of the present invention, the width of the first part of the second electrode extension section can be narr...

Embodiment 2

[0084] In this embodiment, if Figure 9 As shown, the difference from Embodiment 1 is that the two lead wires 81 and 83 of the p-electrode in this embodiment have no ends as in Embodiment 1, and other parts are the same.

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Abstract

The present invention provides a semiconductor light-emitting element, comprising: a first conductivity type semiconductor layer and a second conductivity type semiconductor layer; a first electrode and a second electrode respectively arranged on the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; layer, and located on the same side of the semiconductor light-emitting element; at least one second electrode lead, including a connection section connected to the second electrode and an extension section extending from the connection section to the first electrode; characterized in that: The second electrode lead extension section has a first part extending from the second electrode lead connection section to gradually approaching the first electrode and a second part extending from the first part gradually approaching the first electrode, and the width of the first part is from The extension direction changes gradually, and the width of the second portion is constant. The width of the first part of the second electrode lead extension section of the present invention decreases gradually from the extension direction, which can improve the overvoltage impact performance (EOS performance) of the semiconductor light emitting element.

Description

technical field [0001] The invention relates to a semiconductor light-emitting element, which belongs to the technical field of semiconductor optoelectronics. Background technique [0002] Light Emitting Diode (LED for short) has the advantages of high luminous intensity, high efficiency, small size, long service life, etc., and is considered to be one of the most potential light sources at present. In recent years, LEDs have been widely used in daily life, such as lighting, signal display, backlight, car lights, and large-screen displays. At the same time, these applications also put forward higher requirements for the brightness and luminous efficiency of LEDs. [0003] In order to improve the luminous efficiency of LEDs, in addition to gradually optimizing the design of LED chips for small electrodes, they will also be optimized for thin electrode leads to reduce the light blocking area and increase the luminous brightness. However, at a high current density, thin electr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/36H01L33/38
CPCH01L33/62H01L33/647
Inventor 陈思河王锋王绘凝贺春兰洪灵愿彭康伟
Owner XIAMEN SANAN OPTOELECTRONICS CO LTD
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