Nitrogen-containing compound, electronic element, and electronic device

A technology of nitrogen compounds and chemical formulas, applied in the field of electronic devices, can solve problems such as performance needs to be further improved

Active Publication Date: 2020-05-12
SHAANXI LIGHTE OPTOELECTRONICS MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the performance of the existing hole transport layer materials containing fluorene groups needs to be further improved

Method used

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  • Nitrogen-containing compound, electronic element, and electronic device
  • Nitrogen-containing compound, electronic element, and electronic device
  • Nitrogen-containing compound, electronic element, and electronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0243] Green organic electroluminescent devices are prepared by the following method

[0244] Set the ITO thickness to The ITO substrate (manufactured by Corning) was cut into a size of 40mm (length) × 40mm (width) × 0.7mm (thickness), and it was prepared into an experimental substrate with cathode, anode and insulating layer patterns by using a photolithography process. Ozone and O 2 :N 2 Plasma surface treatment was performed to increase the work function of the anode (experimental substrate) and to remove scum.

[0245] Vacuum evaporated m-MTDATA on the experimental substrate (anode) to form a thickness of The hole injection layer (HIL), and vacuum-evaporated NPB on the hole injection layer to form a thickness of the first hole transport layer.

[0246] Compound 1 is vapor-deposited on the first hole transport layer to form a thickness of the second hole transport layer.

[0247] Using CBP as the main material, doping Ir(ppy) at the same time according to the film...

Embodiment 2- Embodiment 43

[0253] Use the compounds synthesized in the following table 8 to replace compound 1 respectively to form a thickness of The second hole-transporting layer is used to prepare the corresponding green organic electroluminescent device.

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Abstract

The invention provides a nitrogen-containing compound shown as a chemical formula I, an electronic element and an electronic device, and belongs to the technical field of organic materials. The nitrogen-containing compound can improve the performance of an electronic component. The structure represented as the specification refers to a chemical bond, wherein R1 and R2 are respectively and independently selected from hydrogen and a group shown as a chemical formula 1-1, and only one of R1 and R2 is a group shown as a chemical formula 1-1; when R1 or R2 is selected from hydrogen, R1 or R2 selected from hydrogen can be substituted by R4.

Description

technical field [0001] The present application relates to the technical field of organic materials, and in particular to a nitrogen-containing compound, an electronic component using the nitrogen-containing compound, and an electronic device using the electronic component. Background technique [0002] With the development of electronic technology and the progress of material science, the application range of electronic components for realizing electroluminescence or photoelectric conversion is becoming wider and wider. Such electronic components generally include a cathode and an anode oppositely arranged, and a functional layer arranged between the cathode and the anode. The functional layer is composed of multiple organic or inorganic film layers, and generally includes an energy conversion layer, a hole transport layer located between the energy conversion layer and the anode, and an electron transport layer located between the energy conversion layer and the cathode. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07C211/61C07C211/54C07C211/56C07C211/58C07D307/91C07D333/76C07D209/88C07D339/08C07D319/24C07F7/08C07D265/38C07D311/82C07D209/86C07D471/04C07D215/12C07D213/38C07D327/08C07C255/58C07D213/74C07D215/38C07D215/44C07D405/12C07D409/12C09K11/06H01L51/50H01L51/54H01L51/46H01L51/44
CPCC07C211/61C07C211/54C07C211/56C07C211/58C07D307/91C07D333/76C07D209/88C07D339/08C07D319/24C07F7/0816C07D265/38C07D311/82C07D209/86C07F7/0812C07D471/04C07D215/12C07D213/38C07D327/08C07C255/58C07D213/74C07D215/38C07D215/44C07D405/12C07D409/12C09K11/06C07C2603/94C07C2603/18C07C2603/26C07C2601/14C09K2211/1007C09K2211/1011C09K2211/1014C09K2211/1029C09K2211/1044C09K2211/1033C09K2211/1088C09K2211/1092C09K2211/1096H10K85/624H10K85/636H10K85/626H10K85/633H10K85/615H10K85/631H10K85/654H10K85/6576H10K85/6574H10K85/657H10K85/40H10K30/80H10K85/6572H10K50/18C07D407/12C07B2200/05C07F7/081C07B59/001Y02E10/549H10K50/156C07D209/82C07D213/36C07D311/80C07D403/12
Inventor 聂齐齐曹佳梅
Owner SHAANXI LIGHTE OPTOELECTRONICS MATERIAL CO LTD
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