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Preparation method of tungsten-titanium alloy target material

A technology of tungsten-titanium alloy and target material, which is applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems of low density, impurity mixing, uneven microstructure of target material, etc., and achieve microstructure Uniform and guaranteed density effect

Pending Publication Date: 2020-05-15
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The problem solved by the present invention is that the density of the tungsten-titanium alloy target prepared in the prior art is low, and impurities will be mixed in during the manufacturing process, making the microstructure of the target uneven

Method used

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  • Preparation method of tungsten-titanium alloy target material
  • Preparation method of tungsten-titanium alloy target material
  • Preparation method of tungsten-titanium alloy target material

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Embodiment Construction

[0022] It is known from the background technology that tungsten-titanium alloy sputtering targets occupy a crucial position in the semiconductor industry, and the density requirements and demands for tungsten-titanium alloy sputtering targets are also increasing.

[0023] The analysis found that the hot pressing method is used to make the tungsten-titanium alloy target in the prior art. During the hot-pressing sintering process, the tungsten-titanium alloy powder is put into the vacuum hot-pressing sintering mold and selected according to the size requirements of the finished product The size of the vacuum hot pressing sintering mold; compacting the tungsten-titanium alloy powder filled in the vacuum hot pressing sintering mold to obtain a single tungsten-titanium alloy target blank, and then further machining the tungsten-titanium target blank to obtain In the finished product of tungsten-titanium target material, in the process of processing, the pollutants in the furnace are ea...

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Abstract

The invention provides a preparation method of a tungsten-titanium alloy target material. The preparation method comprises the steps of carrying out cold isostatic pressing technological treatment ontungsten-titanium alloy powder; charging a blank into a sheath and carrying out sealing, wherein the sheath and the blank are isolated through refractory wool so that the blank cannot have a reactionwith the sheath during the follow-up process, a finished tungsten-titanium alloy target material can be taken out from the sheath conveniently after later tapping, and meanwhile, after sealing, it isensured that no impurities can go into the sheath; charging the sealed sheath into a heat treatment furnace for degassing to completely extract the air in the blank, and the gaps between molecules ofthe blank are uniform; and finally, carrying out hot isostatic pressing technological treatment on the degassed sheath to machine the blank into a mature target material. The microstructure of the formed tungsten-titanium alloy target material can be uniform, has toughness and is free of cracks, and the compactness can reach up to 100%.

Description

Technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for preparing a tungsten-titanium alloy target. Background technique [0002] Physical vapor deposition (PVD) is widely used in high-end industries such as photonics, electronics, and information, such as integrated circuits, liquid crystal displays, industrial glass, camera lenses, information storage, ships, and chemicals. The alloy target used in PVD is one of the most important raw materials in the manufacturing process of integrated circuits and liquid crystal displays. Tungsten-titanium alloy is widely used as a diffusion barrier layer in semiconductor chips as a combination with Al, Cu, Ag, Au and other wiring, plays a role in hindering metal diffusion and improving the bonding strength of the metal film and the substrate. [0003] With the upgrading of the semiconductor industry and the continuous expansion of scale, the requirements and demands for high-puri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F9/04B22F3/04B22F3/15B22F5/00C23C14/34
CPCB22F9/04B22F3/04B22F3/15B22F5/00C23C14/3414B22F2009/041B22F2998/10B22F2999/00B22F2201/11
Inventor 姚力军潘杰王学泽罗明浩吴东青
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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