The invention provides a method for
processing a micro-electromechanical systems (MEMS) sensor. The method comprises the following steps: providing a
silicon substrate, and sequentially forming an
etching barrier layer and a first
electrode layer on the positive and reverse sides of the
silicon substrate; patterning the first
electrode layer on the positive side of the substrate; respectively and sequentially forming a sacrificial layer and a second
electrode layer on the substrate; patterning the second electrode layer on the positive side of the substrate;
etching the sacrificial layer to form a
contact hole through the patterned second electrode layer, and respectively forming
metal contact at the bottom of the
contact hole and the second electrode layer; sequentially
etching the second electrode layer, the sacrificial layer, the first electrode layer and the etching
barrier layer from the reverse side of the substrate, continuously etching the substrate so as to reach the etching
barrier layer on the positive side and stopping, and forming a deep groove with a downward opening;
coating photoresist above the front side of the substrate to protect, and reserving a subsequent area in which the sacrificial layer needs to be etched; and etching the sacrificial layer through the patterned second electrode layer, and removing the etching barrier layer at the bottom of the deep groove. According to the method, the process steps are simplified, a smooth flow is guaranteed, and high yield is realized.