Method for cutting indium phosphide crystal into substrate wafer

Abstract

The invention discloses a method for cutting an indium phosphide crystal into a substrate wafer and belongs to the field of semiconductor substrate preparation. The method comprises the following steps: 1, carrying out orientation, cutting the head and tail of a crystal bar, adjusting the orientation of the crystal bar, and carrying out trial cut until obtaining the wafer with the demanded crystalorientation, wherein the cutting end face is the directional end face; 2, carrying out multi-wire cutting, on multi-wire cutting equipment, cutting the crystal bar into the wafer in a manner of beingparallel with the directional end face; 3, washing: washing the wafer until there is no residue or dirt on the surface; and 4, carrying out the cyclotomic method on the wafer to cut the demanded crystal orientation area. According to the technical scheme, for the indium phosphide crystal bar which is high in diameter control difficulty and can easily generate twin crystal / inclusion crystal duringthe growth process, the barrelling process for grinding and removing plenty of InP material is eliminated, at first, the crystal bar is changed into wafers through multi-wire cutting, the substrate wafers close to the standard size and with available crystal orientation are cut from the wafers to the maximum, the wafer yield can be greatly improved, and material loss and waste are reduced.

Description

technical field [0001] The invention belongs to the technical field of metallurgy and relates to the preparation of indium phosphide wafers, in particular to a method for cutting indium phosphide crystals into substrate wafers. Background technique [0002] InP is a group III-V semiconductor material, because of its excellent transport properties, high mobility, special photoelectric properties and excellent radiation resistance, it is used in high-frequency electronic devices (such as HEMT, HBT, etc.), 5G communication, optical fiber communication and radiation-resistant solar cells have a wide range of applications. However, at present, the price of InP single crystal substrate material remains high, and its large-area application is limited by the price. The main reason for the high price of InP single crystal substrate materials is that the yield of InP single crystal growth is low. The twinning phenomenon is the biggest factor affecting the yield of InP single crystal...

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problems of large material loss and small wafer output in the existing wafer production, the present invention first performs multi-line cutting on the ingot to make wafers, and then maximizes the circular cutting of the wafer to output wafers, which can significantly increase the wafer output

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