Forming method of semiconductor device
A semiconductor and device technology, applied in the field of semiconductor device formation, can solve problems such as poor adhesion and poor uniformity of the work function layer, and achieve good uniformity, promote nucleation, and good performance
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[0035] The inventors found that DRAM generally includes a gate structure buried in a substrate and a capacitor structure formed on the substrate. The gate structure usually forms a work function layer between the gate electrode and the gate oxide layer to change the threshold. Voltage, the uniformity of the work function layer is one of the key factors that directly affect the gate leakage current. When the uniformity of the work function layer is poor, the gate leakage current is also large, and the adhesion of the work function layer is not good. Well, it cannot be firmly adhered to the substrate, and it will also affect the adhesion ability, grain size, crystal orientation structure and step coverage of the gate electrode, causing defects in semiconductor devices. Further, the capacitor structure usually includes an upper plate, a lower plate and a dielectric between the upper and lower plates, and the uniformity of the upper plate and the lower plate will affect the leakage...
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