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Silver intercalation gating device based on hafnium oxide conversion layer and manufacturing method of gating device

A gating device and transition layer technology, applied in the field of microelectronics, can solve the problems of small gating ratio, large leakage current, and low nonlinearity, and achieve the effects of integration, small leakage current, and high nonlinearity

Pending Publication Date: 2020-06-02
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to its complex material system and low nonlinearity (3 )
When the IMT gating tube is turned on, due to its phase change mechanism, the leakage current is very large, and the gating ratio is small
The MIEC gating tube gradually fails due to the accumulation of metal ions involved in conduction, resulting in the inability to have good tolerance

Method used

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  • Silver intercalation gating device based on hafnium oxide conversion layer and manufacturing method of gating device
  • Silver intercalation gating device based on hafnium oxide conversion layer and manufacturing method of gating device
  • Silver intercalation gating device based on hafnium oxide conversion layer and manufacturing method of gating device

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Embodiment 1

[0041] Such as figure 1 As shown, a silver intercalation gating device based on a hafnium oxide conversion layer in this embodiment, the gating device includes a bottom electrode layer, a conversion layer, a silver intercalation layer and a top electrode layer in sequence from bottom to top; wherein: the The material of the bottom electrode is titanium nitride, the material of the transition layer is hafnium oxide film material, and the material of the top electrode is metal tungsten; the thickness of the bottom electrode layer is 170nm, and the thickness of the transition layer is 200nm. The thickness of the silver intercalation layer is 20nm, the thickness of the top electrode layer is 120nm, the shape of each layer of the gating device is square, and the area of ​​each layer is 0.36 μm 2 .

[0042] The silver intercalation gating device based on the hafnium oxide transition layer described above in this embodiment is prepared by the following method, which specifically inc...

Embodiment 2

[0054] A silver intercalation gating device based on a hafnium oxide conversion layer in this embodiment, the gating device sequentially includes a bottom electrode layer, a conversion layer, a silver intercalation layer and a top electrode layer from bottom to top; wherein: the bottom electrode The material is titanium nitride, the transition layer material is hafnium oxide thin film material, the top electrode material is metal tungsten; the thickness of the bottom electrode layer is 170nm, the thickness of the transition layer is 20nm, and the silver intercalation layer The thickness of the top electrode layer is 2nm, the thickness of the top electrode layer is 60nm, the shape of each layer of the gate device is square, and the area of ​​each layer is 0.16 μm 2 .

[0055] The silver intercalation gating device based on the hafnium oxide transition layer described above in this embodiment is prepared by the following method, which specifically includes the following steps: ...

Embodiment 3

[0062] A silver intercalation gating device based on a hafnium oxide conversion layer in this embodiment, the gating device sequentially includes a bottom electrode layer, a conversion layer, a silver intercalation layer and a top electrode layer from bottom to top; wherein: the bottom electrode The material is titanium nitride, the transition layer material is hafnium oxide thin film material, the top electrode material is metal tungsten; the thickness of the bottom electrode layer is 170nm, the thickness of the transition layer is 250nm, and the silver intercalation layer The thickness of the top electrode layer is 40nm, the thickness of the top electrode layer is 150nm, the shape of each layer of the gate device is square, and the area of ​​each layer is 1mm 2 .

[0063] The silver intercalation gating device based on the hafnium oxide transition layer described above in this embodiment is prepared by the following method, which specifically includes the following steps:

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Abstract

The invention discloses a silver intercalation gating device based on a hafnium oxide conversion layer and a manufacturing method of the silver intercalation gating device, and belongs to the technical field of microelectronics. The gating device sequentially comprises a bottom electrode layer, a transition layer, a silver intercalation layer and a top electrode layer from bottom to top, wherein the bottom electrode material is any one of titanium nitride, titanium or platinum, the transition layer material is a hafnium oxide film, and the top electrode material is any one of metal tungsten, titanium or platinum. The gating device prepared by the invention realizes very small leakage current which reaches the pA level; and the ratio of the low-resistance-state current to the high-resistance-state current exceeds 107, so that the nonlinear degree is very high. In addition, the gating device also shows an obvious bidirectional threshold gating characteristic, and facilitates integrationof the device.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a silver intercalation gating device based on a hafnium oxide conversion layer and a manufacturing method thereof. Background technique [0002] In recent years, with the continuous development of the Complementary Metal Oxide Semiconductor (CMOS) process, traditional polysilicon flash memory faces a series of technical limitations when advancing to 20nm technology, and is close to the theoretical physical limit of the process. With the development of the semiconductor industry, various application fields have put forward new requirements for storage devices, and new storage devices are urgently needed to meet the growing needs of life and technology. As an emerging non-volatile memory device, the new RRAM memory has attracted widespread attention due to its excellent characteristics such as fast erasing and writing speed, strong endurance, multi-value storag...

Claims

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Application Information

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IPC IPC(8): H01L45/00C23C14/08C23C14/16C23C14/35
CPCC23C14/352C23C14/083C23C14/165H10N70/026H10N70/8833
Inventor 马国坤刘能帆王浩陈傲
Owner HUBEI UNIV
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