Vertical heterogeneous p-n junction structure device and preparation method thereof
A heterogeneous device technology, applied in the field of vertical hetero p-n junction structure devices and their preparation, can solve the problems of high cost, extremely high equipment requirements, complicated processes, etc., and achieves low production cost, low equipment requirements, and high production efficiency. Effect
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Embodiment 1
[0046]This embodiment provides a device with a vertical heterogeneous p-n junction structure and a preparation method thereof. The device includes: a sapphire substrate 1, a first n-type gallium nitride layer 2 located on the sapphire substrate 1, located in part of the n The p-type gallium oxide layer 3 above the p-type gallium oxide layer, the second n-type gallium nitride layer 4 above the part of the p-type gallium oxide layer, respectively located on the first n-type gallium nitride layer 2, p-type gallium nitride layer Type gallium oxide layer 3 and metal electrodes 7, 6, 5 on the second n-type gallium nitride layer 4. Such as figure 1 Shown is a schematic diagram of a device with a vertical heterogeneous p-n junction structure. Among them, the sapphire substrate 1 can also be a silicon substrate, a silicon carbide substrate, a diamond substrate, an aluminum nitride substrate, a gallium nitride homogeneous substrate, or a flexible substrate such as boron nitride, graphe...
Embodiment 2
[0055] This embodiment provides another annular p-n junction structure device and its preparation method, the device comprising: a sapphire substrate 1, a first n-type gallium nitride layer 2, located above the middle of the first n-type gallium nitride layer The p-type gallium oxide layer 3, the second n-type gallium nitride layer located above the p-type gallium oxide layer, and the metal electrode. Such as Figure 7 Shown is a schematic diagram of a circular p-n junction structure device.
[0056] The preparation method of the annular p-n junction structure device comprises:
[0057] Step (1), growing a first n-type gallium nitride layer 2 on the sapphire substrate 1 with a thickness of 8 μm, figure 2 Schematic diagram of the grown GaN layer.
[0058] Step (2), covering the partially annular region on the grown first n-type gallium nitride layer 2 with a silicon dioxide mask layer 8 by atomic layer deposition, Figure 8 A schematic diagram of the covering mask layer. ...
Embodiment 3
[0064] This embodiment provides a diffusion growth carrier concentration of 1×10 in Step (3) of Embodiment 2. 11 ~1×10 20 / cm 3 The method for the p-type gallium oxide layer, the specific steps are as follows:
[0065] (1) Maintain the pressure in the chemical vapor deposition equipment cavity at 1.01×10 5 Pa, and continuously feed argon with a flow rate of 700 sccm as a reaction gas for 120 minutes.
[0066] (2) Rapidly raise the temperature of the cavity to 1200°C, maintain 1200°C for 60 minutes for annealing, and diffusely grow a p-type gallium oxide film on the n-type gallium nitride layer 2 from the surface far away from the substrate to the surface close to the substrate.
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