Narrow-band infrared detector and manufacturing method thereof

A technology of infrared detector and manufacturing method, which is applied in the field of photoelectric detection, can solve problems such as high cost, reduced stability, and complex structure, and achieve the effects of low cost, high stability, and improved signal-to-noise ratio

Inactive Publication Date: 2020-07-17
魔童智能科技(扬州)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present application solves the problem of combining narrow-band filters in the prior art by providing a narrow-band infrared detector, which integrates a plasmonic structure with a ferroelectric polymer film to realize the absorption and detection of specific wavelengths of infrared light. Problems such as complex structure, high cost, and reduced stability brought about by the time, have achieved beneficial effects such as simple structure, low cost, and high stability

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  • Narrow-band infrared detector and manufacturing method thereof
  • Narrow-band infrared detector and manufacturing method thereof
  • Narrow-band infrared detector and manufacturing method thereof

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Effect test

Embodiment 1

[0043] Such as figure 1 As shown, a narrow-band infrared detector includes from bottom to top: an insulating substrate 1, a metal lower electrode 2, a ferroelectric functional layer 3, a metal upper electrode 4, and a plasmonic structure 5;

[0044]The insulating substrate 1 can be made of sapphire, quartz sheet or intrinsic silicon, and the upper surface of the insulating substrate 1 is covered with a polyester film, and the thickness of the polyester film is 2-5 microns;

[0045] The lower metal electrode 2 is an aluminum metal film with a thickness of 50-150 nanometers;

[0046] The ferroelectric functional layer 3 is a poly(vinylidene fluoride-trifluoroethylene) ferroelectric polymer film (P(VDF-TrFE)), with a thickness of 1-4 microns;

[0047] The metal upper electrode 4 is a nickel-chromium alloy film with a thickness of 10-30 nanometers;

[0048] The plasmonic structure 5 is a lattice structure composed of multiple metal squares with a thickness of 20-100 nanometers. ...

Embodiment 2

[0050] A narrow-band infrared detector, comprising: an insulating substrate, a metal lower electrode, a ferroelectric functional layer, a metal upper electrode, and a plasmonic structure from bottom to top;

[0051] The material of the insulating substrate is intrinsic silicon, and the upper surface of the intrinsic silicon wafer is covered with a polyester film, and the thickness of the polyester film is 2 microns;

[0052] The metal lower electrode is an aluminum metal film with a thickness of 100 nanometers;

[0053] The ferroelectric functional layer is a poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) (70 / 30) ferroelectric polymer film with a thickness of 1 micron;

[0054] The metal upper electrode is a nickel-chromium alloy thin film, the ratio of nickel and chromium is 80:20, and the thickness is 15 nanometers;

[0055] The plasmonic structure is a lattice structure composed of multiple gold squares. The side length of the gold square section is 3.38 microns...

Embodiment 3

[0058] A method of making a narrow-band infrared detector, comprising the following steps:

[0059] S1: substrate preparation: the polyester film is fixed on the insulating substrate, the substrate can be sapphire, quartz plate, intrinsic silicon etc., and the thickness of the polyester film is 2-5 microns;

[0060] S2: preparation of metal lower electrode: adopt vacuum thermal evaporation to grow aluminum metal film on the polyester film in step S1, thickness is 50-150 nanometer;

[0061] S3: Preparation of ferroelectric functional layer: Prepare poly(vinylidene fluoride-trifluoroethylene)P(VDF-TrFE) ferroelectric polymer film on the aluminum metal film in step S2 by solution pulling method, and Anneal at 130°C for 1-2 hours;

[0062] S4: Preparation of metal upper electrode: using ion beam sputtering method to prepare a nickel-chromium alloy film on the ferroelectric polymer film in step S3, the thickness of the nickel-chromium alloy film is 10-30 nanometers;

[0063] S5: ...

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Abstract

The invention discloses a narrow-band infrared detector in the technical field of photoelectric detection. The narrow-band infrared detector comprises an insulating substrate; a metal lower electrodearranged on the insulating substrate; a ferroelectric functional layer arranged on the metal lower electrode; a metal upper electrode arranged on the ferroelectric functional layer; and a plasmon structure arranged on the metal upper electrode, wherein the plasmon structure is a dot matrix formed by a plurality of metal square blocks. The narrow-band infrared detector does not need to be combinedwith a prism or a narrow-band optical filter, can realize selective absorption and sensing of specific infrared light only by adjusting parameters of the metal square dot matrix structure, and is simple in structure, low in cost and high in stability.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, in particular to a narrow-band infrared detector and a manufacturing method thereof. Background technique [0002] Pyroelectric detectors have been widely used in many civilian fields, and have also been used in important fields such as aerospace and military, including the earth sensor of the platform attitude control system, space wide-band detection applications (such as the observation of the earth's radiation budget) And space infrared imaging and other fields have been widely used. [0003] For monitoring and alarm applications in unattended areas, due to different sensing targets, such as personnel, toxic and harmful gases, fires, environmental pollution, agriculture and forestry detection, etc., the infrared center wavelengths emitted are different, so a narrow-band infrared detection system should be used for perception and identification . [0004] Traditional narrow-b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/09H01L31/18
CPCH01L31/09H01L31/18Y02P70/50
Inventor 缪中林孟祥建陈效双
Owner 魔童智能科技(扬州)有限公司
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