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Composite hole transport layer and solar cell and preparation method thereof

A hole transport layer and solar cell technology, applied in the field of solar cells, can solve the problems of battery degradation, damage, aggravate hysteresis effect, destroy perovskite structure, etc., achieve the effect of improving degradation, eliminating hysteresis effect, and accelerating degradation

Active Publication Date: 2020-07-21
HANGZHOU MICROQUANTA SEMICON CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there will be a large number of residual hydroxyl groups and oxygen vacancies on the surface of the nickel oxide substrate prepared by the conventional solution method. These defects will coordinate and complex with the lead ions in the perovskite film, thereby gradually degrading the perovskite and destroying the perovskite. The structure of the mine causes the degradation and damage of the entire battery, reduces the efficiency and stability of the perovskite solar cell, and intensifies the hysteresis effect

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  • Composite hole transport layer and solar cell and preparation method thereof
  • Composite hole transport layer and solar cell and preparation method thereof
  • Composite hole transport layer and solar cell and preparation method thereof

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preparation example Construction

[0023] The present invention also discloses a method for preparing a perovskite solar cell as described above, comprising the following steps:

[0024] Step 1, preparing an ethanol solution of sulfur-containing materials with a concentration of 0.2-1 mol / L.

[0025] Step 2, preparing nickel oxide on the cleaned transparent conductive substrate.

[0026] Step 3. Soak the nickel oxide substrate prepared in step 2 in the ethanol solution of the sulfur-containing material prepared in step 1 and react at a temperature of 50-100°C for 30min-3h, then take it out for vacuum drying, and then perform high-temperature sintering , and prepare a composite hole transport layer containing nickel sulfide-nickel oxide on the surface of the substrate. The conditions of the vacuum drying are as follows: the temperature is 40-100° C., and the drying time is 10-60 minutes. The sintering treatment is carried out in a muffle furnace, and the sintering conditions are as follows: the sintering tempe...

Embodiment 1

[0032] The first embodiment of the method for preparing a perovskite solar cell of the present invention comprises the following steps:

[0033] 11. Preparation of ethanol solution of sulfur-containing materials: Weigh 0.0751g of thioacetamide and dissolve in 1mL of ethanol, dissolve at 60°C, and prepare 1mol / L thioacetamide solution.

[0034] 12. Preparation of nickel oxide substrate: spin-coat the nickel oxide precursor solution prepared by the solution method on the cleaned FTO substrate, the spin-coating condition is 3000rpm / s, anneal at 100°C for 20min, cool, and the film thickness on the FTO substrate is about 20nm nickel oxide hole transport layer.

[0035] 13. Preparation of composite hole transport layer: Soak the FTO substrate of nickel oxide prepared above in the thioacetamide solution prepared in step 11 at 60°C for 30 minutes, take out the substrate and dry it at 70°C for 10 minutes, and then dry it at 300°C Annealed for 30 minutes to prepare a composite hole tra...

no. 2 Embodiment

[0040] The second embodiment of the method for preparing a perovskite solar cell of the present invention comprises the following steps:

[0041]21. Prepare ethanol solution of sulfur-containing materials: weigh 0.0761g thiourea and dissolve in 1mL ethanol, dissolve at 70°C, and prepare 1mol / L thiourea ethanol solution.

[0042] 22. Preparation of nickel oxide substrate: spin-coat nickel oxide nanoparticle dispersion liquid on the cleaned ITO substrate, and the spin-coating condition is 3000rpm / s. Anneal at 100° C. for 20 minutes, and cool to obtain a nickel oxide hole transport layer with a film thickness of about 20 nm on the ITO substrate.

[0043] 23. Preparation of composite hole transport layer: Soak the nickel oxide-prepared ITO substrate in the 70°C thiourea ethanol solution prepared in step 21 for 30 minutes, take out the substrate and dry it at 80°C for 10 minutes, then anneal at 400°C After 30 minutes, a composite hole transport layer containing nickel oxide-nickel...

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Abstract

The invention relates to a composite hole transport layer. The composite hole transport layer comprises a nickel oxide layer and a nickel sulfide layer formed by treating the surface layer of nickel oxide with a sulfur-containing material, the composite hole transport layer is prepared by the following method: preparing nickel oxide on a conductive substrate, soaking the substrate deposited with the nickel oxide in a sulfur-containing material solution for reaction, then taking out the substrate, carrying out vacuum drying, and then carrying out high-temperature sintering. The invention also discloses a solar cell and a preparation method thereof. According to the invention, the hysteresis effect of the perovskite solar cell is basically eliminated, and the degradation of the perovskite solar cell is improved, so that the perovskite solar cell is more stable and reliable.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a composite hole transport layer, a solar cell and a preparation method thereof. Background technique [0002] Perovskite solar cells have many advantages such as low preparation cost, easy processing, and high photoelectric conversion efficiency. The general structure of a perovskite solar cell includes: a transparent conductive substrate, a hole transport layer, a perovskite light absorbing layer, an electron transport layer, and a back electrode. [0003] The hole transport layer in perovskite solar cells is mainly used for the effective transport of holes and is an important part of perovskite solar cells. Nickel oxide prepared by the solution method has the advantages of being cheap and easy to obtain, matching with the energy level of perovskite, and has become a commonly used hole transport material for P-I-N type perovskite solar cells. However, there will be a larg...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/48H01L51/46
CPCH10K85/30H10K30/451H10K2102/00Y02E10/549Y02P70/50
Inventor 不公告发明人
Owner HANGZHOU MICROQUANTA SEMICON CO LTD