Ultrathin vapor chamber and manufacturing method thereof

Abstract

The invention discloses an ultrathin vapor chamber and a manufacturing method thereof. According to the method, porous mediums with different structures, thicknesses and pores are adopted as liquid absorption cores to be connected to the inner surfaces of an upper shell plate and a lower shell plate with different thicknesses, and processes of welding, vacuumizing, liquid injection, packaging andthe like are performed to prepare the ultrathin vapor chamber; and the middle steam cavity of the vapor chamber adopts a porous metal of a single structure or a patterned structure as a supporting layer, so that it is guaranteed that a working medium rapidly flows after being gasified, rapid reflux after gas-to-liquid phase change is promoted, and working medium phase change circulation is accelerated. According to the invention, the structures and the internal gaps of the liquid absorption cores and the porous metal supporting layer are regulated and controlled, so that with a member with good capillary suction and permeability and high thermal conductivity can be prepared, and the vapor chamber manufactured from the member has the advantages of being high in heat dissipation efficiency,light in weight, good in reliability, suitable for manufacturing an ultra-thin structure, capable of meeting the requirements for high heat conduction efficiency and ultra-thinness required by electronic equipment with high heat flux, capable of being manufactured through a reel-to-reel continuous production process, extremely high in production efficiency and quite suitable for large-scale industrial production.

Description

technical field

[0001] The invention belongs to the technical field of heat conduction, and relates to a vapor chamber technology, in particular to an ultra-thin vapor chamber and a manufacturing method thereof. Background technique

[0002] The miniaturization of electronic devices has become the mainstream trend in the development of modern electronic equipment. The feature size of electronic devices has been continuously reduced (for example, the feature size of microprocessors has been reduced from 0.35 µm to 0.18 µm from 1990 to 2000), and the integration level, packaging density, and operating frequency of chips have continued to increase. The heat flux increases rapidly. Studies have shown that more than 55% of the failure modes of electronic equipment are caused by excessive temperature, so the thermal reliability design of electronic devices plays a pivotal role in the development of electronic devices.

[0003] With the increasing integration and thinning of elec...

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