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Enrichment device chip structure and preparation method thereof

A chip structure and concentrator technology, applied in microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve the problems of uneven distribution of gas flow field and limited enrichment rate, so as to improve the bearing capacity and improve the Uniformity, effect of extending the gas flow path

Pending Publication Date: 2020-08-04
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a concentrator chip structure and preparation method, which are used to solve the problems of uneven distribution of gas flow field and limited enrichment rate in the prior art.

Method used

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  • Enrichment device chip structure and preparation method thereof
  • Enrichment device chip structure and preparation method thereof
  • Enrichment device chip structure and preparation method thereof

Examples

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Embodiment 1

[0076] Such as Figure 1-9 Shown, the present invention provides a kind of preparation method of concentrator chip structure, and described preparation method comprises the following steps:

[0077] providing a substrate 100, and preparing a groove structure 101 in the substrate 100;

[0078] Several microcolumn structures 102 are prepared in the substrate 100, the microcolumn structures 102 are located in the groove structure 101, and the microcolumn structures 102 include a first extension part 102a, a connecting part 102b and The second extension part 102c, the first extension part 102a, the connecting part 102b and the second extension part 102c enclose a space area with an opening, and the adjacent micro-column structures 102 are nested based on the opening set up;

[0079] Prepare at least two microfluidic ports 103 in the substrate 100, the microfluidic ports 103 communicate with the groove structure 101; and

[0080] A cover plate 106 is provided, and the cover plat...

Embodiment 2

[0138] Additionally, if Figure 11-12 shown, see Figure 1-10 , the present invention also provides another method for preparing the chip structure of the concentrator. The difference from the first embodiment is that the formation sequence and method of the adsorption material layer 111 are different. In this embodiment, in the preparation of the The adsorption material layer 111 is prepared before the cover plate 106, wherein the method of preparing the adsorption material layer 111 includes at least one of evaporation, sputtering, atomic layer deposition, and molecular vapor deposition, that is, the formation of the mesoporous oxidation After the silicon layer 105, an adsorption material layer 111 (such as aluminum oxide, etc.) is deposited (such as by evaporation, sputtering, atomic layer deposition, and molecular vapor deposition). In one example, when the micro-pillar structure 102 is formed based on a patterned mask layer In the case of other structures, the patterned ...

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Abstract

The invention provides an enrichment device chip structure and a preparation method thereof. The preparation method comprises the following steps of: providing a substrate and preparing a groove structure; preparing a plurality of micro-column structures, wherein the adjacent micro-column structures are nested based on an opening; preparing a micro-fluidic port, wherein the micro-fluidic port is communicated with the groove structure; and providing a cover plate, preparing the cover plate on the side, where the groove structure is formed, of the substrate, and enabling the cover plate to at least cover the groove structure. According to the preparation method, the embedded micro-column structure array is designed in the cavity formed by the groove structure, large surface area can be obtained, the flow field is uniformly distributed, a gas flow path is extended, and the uniformity of an adsorption material and the enrichment rate of an adsorption gas are improved; in addition, a layerof mesoporous silicon oxide with a high specific area, such as nano mesoporous silicon oxide, is constructed on the inner surface of the cavity, so that the inner surface area in the cavity can be greatly increased, the bearing capacity of the adsorption material is further improved, and the enrichment rate of the enrichment device chip structure is improved.

Description

technical field [0001] The invention belongs to the field of micro-electromechanical systems, and in particular relates to a concentrator chip structure and a preparation method thereof. Background technique [0002] Enrichment is an important analytical technique. The enricher is an important part of a gas analysis instrument (such as a gas chromatograph, ion mobility spectrometer, mass spectrometer), and is often installed at the front end of the instrument. Its main function is to adsorb a large number of target gas components to be detected, that is, to enrich , and then the target gas component is desorbed in a very short time, at this time the concentration of the target gas component is instantly amplified and sent to the analytical instrument for detection. Generally speaking, the enricher can improve the detection capability of the analytical instrument by 1-3 orders of magnitude. When the concentration of the target gas is relatively low, especially when it is low...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/02B81C1/00
CPCB81B7/02B81C1/00B81C1/00015
Inventor 冯飞赵斌李昕欣
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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