Aluminum nitride ceramic with high thermal conductivity and high strength and preparation method thereof

A technology of aluminum nitride ceramics and aluminum nitride, which is applied in the field of ceramic materials, can solve the problems of high thermal conductivity, incompatibility, and high bending strength, and achieve excellent thermal properties, reduce contact thermal resistance, and reduce sintering temperature.

Inactive Publication Date: 2020-08-04
HUAZHONG UNIV OF SCI & TECH
View PDF9 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above defects or improvement needs of the prior art, the present invention provides an aluminum nitride ceramic with high thermal conductivity and high strength and a preparation method thereof, which is obtained by oxidizing the aluminum nitride sintered body obtained by pressureless sintering Process and prepare aluminum nitride ceramics, thereby solving the technical problem that the existing aluminum nitride ceramics cannot take into account high thermal conductivity and high bending strength

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Aluminum nitride ceramic with high thermal conductivity and high strength and preparation method thereof
  • Aluminum nitride ceramic with high thermal conductivity and high strength and preparation method thereof
  • Aluminum nitride ceramic with high thermal conductivity and high strength and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0028] A kind of preparation method of aluminum nitride ceramic provided by the invention comprises the following steps:

[0029] (1) mixing the aluminum nitride powder and the sintering aid to obtain a mixture;

[0030] (2) granulating, pressing and forming the mixture and performing pressureless sintering to obtain an aluminum nitride sintered body;

[0031] (3) The aluminum nitride sintered body is oxidized to obtain aluminum nitride ceramics, and the surface of the aluminum nitride ceramics has an oxide layer, and the main component of the oxide layer is aluminum oxide.

[0032] The sintering aids may be commonly used sintering aids, and in some preferred embodiments, the sintering aids are yttrium oxide powder and yttrium fluoride powder. Y 2 o 3 The ability to drive oxygen is strong. During the sintering process, the Al on the surface of AlN particles 2 o 3 Combined to generate one or more yttrium aluminates, the oxygen dissolved in the AlN lattice can be migrated t...

Embodiment 1

[0041] Example 1: The mass percentage of AlN powder is 97%, Y 2 o 3 2% by mass and YF 3 The mass percentage is 1%, the oxidation treatment temperature is 1000° C., and the oxidation time is 1 h.

Embodiment 2

[0042] Example 2: AlN powder mass percentage is 97%, Y 2 o 3 2% by mass and YF 3 The mass percentage is 1%, the oxidation treatment temperature is 1100° C., and the oxidation time is 1 h.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
flexural strengthaaaaaaaaaa
flexural strengthaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the technical field of ceramic materials, and particularly relates to preparation of pressureless sintering high-thermal-conductivity and high-strength aluminum nitride ceramic. The aluminum nitride ceramic is prepared by carrying out oxidation treatment on an aluminum nitride sintered body obtained by pressureless sintering, a compact oxide layer with a proper thickness can be formed on the surface of the aluminum nitride sintered body through proper oxidation treatment, the residual compressive stress in an aluminum nitride matrix can be increased through the formation of the oxide layer, and the change of the residual compressive stress is beneficial to preventing expansion of cracks in the aluminum nitride ceramic and reducing the contact thermal resistance ofan aluminum nitride grain boundary. According to the aluminum nitride ceramic provided by the invention, after oxidation treatment, the thermal conductivity can be improved to 185-210 W/(m.K), the bending strength is improved to 390-460 MPa, the dielectric constant is 9-10, the dielectric loss is 0.8*10<-3> to 2.4*10<-3>, and the application requirements of industries such as semiconductor devicesand integrated circuits can be met.

Description

technical field [0001] The invention belongs to the technical field of ceramic materials, and more specifically relates to the preparation of pressureless sintered aluminum nitride ceramics with high thermal conductivity and high strength. Background technique [0002] With the rapid development of microelectronics technology, devices are required to develop in the direction of large capacity, high density, high speed, and high power output. More and more complex devices put forward higher and higher requirements for heat dissipation of substrates and packaging materials. Require. The maximum thermal conductivity of traditional resin substrates and alumina ceramic substrates is only about 30W / (m·K), which is far from meeting the heat dissipation requirements of today's devices. Although the thermal conductivity of beryllium oxide ceramic material can reach 350W / (m·K), it is expensive and has toxicity in the preparation process. Aluminum nitride ceramics have excellent ther...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/581C04B35/622C04B35/626C04B35/64C04B41/00
CPCC04B35/581C04B35/622C04B35/62605C04B35/64C04B41/0072C04B41/009C04B2235/668C04B2235/96C04B2235/9607
Inventor 汪小红姜海吕文中范桂芬雷文付明王晓川梁飞
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products