Mask blank, phase shift mask, and method for manufacturing semiconductor device
A phase-shift mask and mask blank technology, which can be applied in the manufacture of semiconductor/solid-state devices, photoengraving process of patterned surface, exposure device of photoengraving process, etc., and can solve the problems of low tolerance and the like
Active Publication Date: 2020-08-07
HOYA CORP +1
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Problems solved by technology
However, as disclosed in Patent Document 1, it has been found in recent years that MoSi-based films have low resistance to exposure light of ArF excimer laser light (so-called ArF light resistance).
Method used
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Embodiment
[0156] Hereinafter, Examples 1 to 4 and Comparative Examples 1 and 2 for describing the embodiment of the present invention more specifically will be described.
[0157] [Manufacture of mask blank]
[0158] In Examples 1 to 4 and Comparative Examples 1 and 2, translucent substrates 1 made of synthetic quartz glass having a main surface size of about 152 mm×about 152 mm and a thickness of about 6.25 mm were prepared. The end face and the main surface of the light-transmitting substrate 1 were polished to a predetermined surface roughness, and then predetermined cleaning and drying treatments were performed.
[0159] Next, a light-transmitting substrate 1 is set in a monolithic RF sputtering device, and a silicon (Si) target is used to mix krypton (Kr), nitrogen (N 2 ) and helium (He) as the sputtering gas, the lower layer A of the phase shift film 2 containing silicon and nitrogen was formed on the light-transmitting substrate 1 by reactive sputtering (RF sputtering) using an ...
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Abstract
The present invention provides a mask blank capable of suppressing the surface roughness of a transmissive substrate when EB defect correction is performed and suppressing spontaneous etching of the pattern of a phase shift film. A phase shift film held in contact with a transmissive substrate has a laminate structure comprising two or more layers including the lowermost layer. Layers other than the lowermost layer are made of a material containing silicon and one or more elements selected from metalloid elements and nonmetal elements, and the lowermost layer is made of a material containing silicon and nitride, or a material comprising the material containing silicon and nitride and one or more elements selected from metalloid elements and nonmetal elements. In the lowermost layer, a ratio calculated by dividing the number of existing Si3N4 bonds by the total number of existing Si3N4 bonds, SiaNb bonds (here, b / [a+b] < 4 / 7), and Si-Si bonds is 0.05 or less, and a ratio calculated by dividing the number of existing SiaNb bonds by the total number of existing Si3N4 bonds, SiaNb bonds, and Si-Si bonds is 0.1 or greater.
Description
technical field [0001] The present invention relates to a mask blank and a phase shift mask manufactured using the mask blank. In addition, the present invention relates to a method of manufacturing a semiconductor device using the above-mentioned phase shift mask. Background technique [0002] In the manufacturing process of a semiconductor device, a fine pattern is formed using a photolithography method. In addition, a plurality of transfer masks are usually used for the formation of the fine pattern. When miniaturizing the pattern of a semiconductor device, in addition to miniaturization of the mask pattern formed on the transfer mask, it is also necessary to shorten the wavelength of the exposure light source used in photolithography. In recent years, ArF excimer laser light (wavelength: 193 nm) has been increasingly used as an exposure light source in the manufacture of semiconductor devices. [0003] One type of mask for transfer includes a halftone type phase shift...
Claims
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IPC IPC(8): G03F1/32G03F1/54G03F1/74G03F7/20
CPCG03F1/32G03F1/54G03F7/20G03F1/26G03F1/38H01L21/027
Inventor 宍戸博明桥本雅广打田崇内田真理子
Owner HOYA CORP