Unlock instant, AI-driven research and patent intelligence for your innovation.

Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device

A manufacturing method and photomask technology, which is applied in semiconductor/solid-state device manufacturing, microlithography exposure equipment, optomechanical equipment, etc., can solve problems such as poor tolerance, achieve high transfer printing accuracy, and suppress surface roughness

Active Publication Date: 2020-01-03
HOYA CORP +1
View PDF9 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as disclosed in Patent Document 1, it has been found in recent years that a light-shielding film of a transition metal silicide-based material has poor resistance to exposure light (ArF exposure light) of an ArF excimer laser (so-called ArF light resistance).

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
  • Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
  • Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0116] [Manufacturing of photomask base]

[0117]A light-transmitting substrate 1 made of synthetic quartz glass having a main surface size of about 152 mm×about 152 mm and a thickness of about 6.25 mm was prepared. The end face and the main surface of the translucent substrate 1 are polished to a predetermined surface roughness, and thereafter, predetermined cleaning and drying processes are performed.

[0118] Next, a light-transmitting substrate 1 is set in a monolithic RF sputtering device, a silicon (Si) target is used, and argon (Ar), nitrogen (N 2 ) and helium (He) gas mixture (flow ratio Ar: N 2 : He=30:3:100) is the sputtering gas, reactive sputtering (RF sputtering) is performed by RF power supply, and a light-shielding film composed of silicon and nitrogen elements is formed on the light-transmitting substrate 1 with a thickness of 50.0nm. film2. In addition, the power of the RF power supply during sputtering was 1500W.

[0119] Next, for the purpose of adjustin...

Embodiment 2

[0137] [Manufacturing of photomask base]

[0138] The photomask base of Example 2 was manufactured by the same procedure as the photomask base 100 of Example 1 except having comprised the light-shielding film as follows.

[0139] The method of forming the light-shielding film of Example 2 is as follows.

[0140] A light-transmitting substrate 1 is set in a monolithic RF sputtering device, a silicon (Si) target is used, and a mixed gas of argon (Ar), nitrogen (N2) and helium (He) (flow ratio Ar:N 2 : He=30:2.3:100) is the sputtering gas, reactive sputtering (RF sputtering) is performed by RF power supply, and a light-shielding layer composed of silicon and nitrogen elements is formed on the light-transmitting substrate 1 with a thickness of 41.5nm. film2. In addition, the power of the RF power supply during sputtering was 1500W.

[0141] The light-transmitting substrate 1 on which the light-shielding film 2 was formed was heat-treated in the same manner as in Example 1, and ...

Embodiment 3

[0150] [Manufacturing of photomask base]

[0151] The photomask base of Example 3 was manufactured by the same procedure as the photomask base 100 of Example 1 except having comprised the light-shielding film as follows.

[0152] The method of forming the light-shielding film of Example 3 is as follows.

[0153] A light-transmitting substrate 1 is set in a monolithic RF sputtering device, a silicon (Si) target is used, and a mixed gas of argon (Ar), nitrogen (N2) and helium (He) (flow ratio Ar:N 2 : He=30:5.8:100) is the sputtering gas, reactive sputtering (RF sputtering) is performed by RF power supply, and a light-shielding layer composed of silicon and nitrogen elements is formed on the light-transmitting substrate 1 with a thickness of 52.4nm. film2. In addition, the power of the RF power supply during sputtering was 1500W.

[0154] The light-transmitting substrate 1 on which the light-shielding film 2 was formed was heat-treated in the same manner as in Example 1, and ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a mask blank, a method for manufacturing a transfer mask, and a method for manufacturing a semiconductor device, with which it is possible to minimize the incidence of surface roughness in a translucent substrate when EB defect correction is performed, and with which it is possible to minimize the incidence of spontaneous etching in the pattern of a light-blocking film. The present invention comprises a light-blocking film for forming a transfer pattern on a translucent substrate, the light-blocking film being formed from a material comprising silicon and nitrogen, or a material that further includes at least one element selected from among metalloid elements and non-metallic elements. The ratio obtained by dividing the number of Si3N4 bonds present in the internal region of the light-blocking film, excluding the region near the interface of the light-blocking film with the translucent substrate and the surface-layer region of the light-blocking film on the opposite side to the translucent substrate, by the total number of Si3N4 bonds, SiaNb bonds (b / [a+b]<4 / 7), and Si-Si bonds, is 0.04 or less, and the ratio obtained by dividing the number of SiaNb bonds present in the internal region of the light-blocking film by the total number of Si3N4 bonds, SiaNb bonds, and Si-Si bonds is 0.1 or greater.

Description

technical field [0001] The present invention relates to a photomask substrate and a method for producing a photomask for transfer manufactured using the photomask substrate. Furthermore, this invention relates to the manufacturing method of the semiconductor device using the said photomask for transfer. Background technique [0002] In the manufacturing process of semiconductor devices, fine patterns are formed using photolithography. In addition, a plurality of photomasks for transfer are generally used for the formation of this fine pattern. When miniaturizing the pattern of a semiconductor device, it is necessary to shorten the wavelength of an exposure light source used in photolithography in addition to miniaturization of a mask pattern formed on a transfer mask. In recent years, ArF excimer laser light (wavelength: 193 nm) has been increasingly used as an exposure light source in the manufacture of semiconductor devices. [0003] There are various types of transfer ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/54G03F1/50G03F7/20
CPCG03F1/54G03F1/50G03F7/20G03F7/2006H01L21/0274
Inventor 桥本雅广内田真理子
Owner HOYA CORP