Silicon negative electrode material with fluff structure and preparation method of silicon negative electrode material

A silicon anode and fluff technology, applied in structural parts, metal material coating process, battery electrodes, etc., can solve problems such as poor electrical conductivity and reduced electrical contact, to improve the pass rate, reliable electrical contact, and increase battery rate. performance effect

Active Publication Date: 2020-08-11
LANXI ZHIDE ADVANCED MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it has been proved by literature that in the long cycle process, the coating film will still be cracked due to excessive volume expansion, resulting in reduced electrical contact and poor electrical conductivity.

Method used

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  • Silicon negative electrode material with fluff structure and preparation method of silicon negative electrode material
  • Silicon negative electrode material with fluff structure and preparation method of silicon negative electrode material
  • Silicon negative electrode material with fluff structure and preparation method of silicon negative electrode material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] SiO 2 Si powder, Si powder and 1wt% ferrocene were evenly mixed and placed in a chemical vapor deposition (CVD) furnace, heated to 1100 ° C, and the air pressure was kept at 500 Pa. After the deposition product was cooled, it was crushed and sieved to obtain iron-doped SiO powder, its diameter D50=5μm.

[0039] Heat the iron-doped SiO powder obtained in the previous step to 950°C in a CVD furnace. The vacuum in the furnace is controlled at 300Pa, and propylene with a flow rate of 9L / min and argon gas with a flow rate of 18L / min are introduced. The deposition time is 1h. Propylene was catalytically cracked to generate CNT fluff in situ on the surface of SiO powder, and the mass fraction of CNT fluff compared to the inner core was 3%.

[0040] Continue to heat the SiO / CNT composite powder obtained in the previous step to 950°C in a CVD furnace. The vacuum in the furnace is controlled at 300Pa, and propylene with a flow rate of 9L / min and argon gas with a flow rate of 18...

Embodiment 2-6

[0050] Other steps and process parameters are the same as in Example 1, the difference is that the physical properties of CNT are changed by controlling the deposition temperature, pressure and time; the thickness of the cladding layer of the fast ion conductor is changed by controlling the amount of fast ion conductor powder added. In addition, powder resistivity testing and secondary battery evaluation were performed in the same steps as in Example 1.

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Abstract

The invention discloses a silicon negative electrode material with a fluff structure and a preparation method of the silicon negative electrode material. The silicon negative electrode material with the fluff structure comprises a silicon-based active material, carbon nanotubes, a carbon layer and a fast ion conductor layer, wherein the carbon nanotubes grow on the surface of the silicon-based active material in situ to form a fluff structure, the surfaces of the silicon-based active material and the carbon nanotubes are coated with the carbon layer, the surface of the carbon layer is coated with the fast ion conductor layer, the carbon layer grows in the axial direction of the carbon nanotubes, and it is ensured that the material still has the fluff structure finally. According to the invention, through the fluff structure on the surface thereof, more conductive channels are provided; reliable conductive contact of the silicon material before and after volume expansion is guaranteed,so that volume expansion is buffered better, cracking of a coated film is avoided, ionic conductivity can be improved greatly by controlling graphitization degree of the carbon nanotubes and matchingwith the fast ion conductor layer, and the material has the characteristics of high conductivity, long cycle, high rate and the like.

Description

technical field [0001] The invention belongs to the technical field of batteries, and in particular relates to a silicon negative electrode material with a fluffy structure and a preparation method thereof. Background technique [0002] Due to its high theoretical specific capacity (4200 mA h / g at high temperature and 3580 mA h / g at room temperature), low delithiation potential (<0.5 V), silicon anode material is environmentally friendly, abundant in reserves, and low in cost. It is considered to be a very potential next-generation high-energy-density lithium-ion battery anode material, but its volume expansion and unstable interface reactions during charging and discharging have not been completely resolved, which greatly limits the development of silicon materials. . At present, the research directions of silicon anode materials mainly include nano-silicon-carbon composite materials, silicon oxide materials, amorphous silicon alloys, porous silicon-oxygen materials, et...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/48H01M4/62H01M10/0525C23C16/26C23C16/40
CPCH01M4/483H01M4/624H01M4/625H01M10/0525C23C16/26C23C16/401Y02E60/10
Inventor 陈青华胡盼姚林林房冰
Owner LANXI ZHIDE ADVANCED MATERIALS CO LTD
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