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Preparation method of sulfoaminobiotin modified indium nitride paste electrode sensor

An electrode sensor and indium nitride paste technology, which is applied in the field of electrochemical analysis, can solve the problems of not effectively utilizing the area and low capacity, and achieve the effects of low cost, wide electrochemical window and small residual current

Active Publication Date: 2020-08-18
UNIV OF JINAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The capacity of single-layer graphene can reach 21μF / cm 2 , but in many cases graphene is stacked with multiple layers, the area between layers is not effectively utilized, and its actual capacity is lower than that of single-layer graphene. Combining graphene with other nanostructures also inhibits the development of graphene layer overlap

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] (1) Preparation of indium nitride paste electrode sensor: In an agate mortar, add nano-indium nitride: 50g, graphene oxide: 22g, 1-aminopropyl-3-methylimidazolium bromide: 13g, Mineral oil: 6g, amyl alcohol: 10 mL, grind evenly to get the mixture carbon paste; then put the carbon paste into a glass tube with an inner diameter of Φ4mm connected with a wire, compact, dry, grind with polishing powder, polish, Wash with deionized water to obtain indium nitride paste electrode sensor;

[0028] (2) Preparation of triethylenetetramine / quantum dot modified indium nitride paste electrode: In the reactor, add deionized water: 80 mL, triethylenetetramine: 16g, carbon quantum dots: 4g, and stir to dissolve , put the indium nitride paste electrode into it, soak it at room temperature for 4 hours, raise the temperature to 45±2°C and react at a constant temperature for 1 hour, take out the electrode, wash it with deionized water and absolute ethanol, and dry it to obtain triethylenete...

Embodiment 2

[0031] (1) Preparation of indium nitride paste electrode sensor: In an agate mortar, add nano-indium nitride: 27g, graphene oxide: 10g, 1-aminopropyl-3-methylimidazolium bromide: 6g, Mineral oil: 3g, amyl alcohol: 6 mL, grind evenly to obtain the carbon paste of the mixture; then put the carbon paste into a glass tube with an inner diameter of Φ4mm connected with a wire, compact it, dry it, grind it with polishing powder, polish it, Wash with deionized water to obtain indium nitride paste electrode sensor;

[0032] (2) Preparation of triethylenetetramine / quantum dot modified indium nitride paste electrode: In the reactor, add deionized water: 39 mL, triethylenetetramine: 8.5g, carbon quantum dots: 2.5g, Stir and dissolve, put the indium nitride paste electrode into it, soak it at room temperature for 4 hours, raise the temperature to 45±2°C and react at a constant temperature for 1 hour, take out the electrode, wash it with deionized water and absolute ethanol, and dry it to o...

Embodiment 3

[0035] (1) Preparation of indium nitride paste electrode sensor: In an agate mortar, add nano-indium nitride: 48g, graphene oxide: 24g, 1-aminopropyl-3-methylimidazolium bromide: 14g, Mineral oil: 8g, amyl alcohol: 8 mL, grind evenly to obtain the carbon paste of the mixture; then put the carbon paste into a glass tube with an inner diameter of Φ4mm connected with a wire, compact it, dry it, grind it with polishing powder, polish it, Wash with deionized water to obtain indium nitride paste electrode sensor;

[0036] (2) Preparation of triethylenetetramine / quantum dot modified indium nitride paste electrode: In the reactor, add deionized water: 82 mL, triethylenetetramine: 15g, carbon quantum dots: 3g, and stir to dissolve , put the indium nitride paste electrode into it, soak it at room temperature for 4 hours, raise the temperature to 45±2°C and react at a constant temperature for 1 hour, take out the electrode, wash it with deionized water and absolute ethanol, and dry it to...

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Abstract

The invention discloses a preparation method of a sulfoaminobiotin modified indium nitride paste electrode sensor, and the method is characterized in that the method comprises the steps: preparing a indium nitride paste electrode sensor from nano indium nitride, graphene oxide, 1-aminopropyl-3-methylimidazolium bromide, mineral oil and pentanol; modifying the indium nitride paste electrode by adopting triethylenetetramine and carbon quantum dots to prepare a triethylenetetramine / quantum dot modified indium nitride paste electrode; adding 92-96% of phosphate buffer solution and 4-8% of sulfoaminobiotin into a reactor, performing dissolving, putting the triethylenetetramine / quantum dot modified indium nitride paste electrode into the solution, performing stirring and soaking for 2 hours at room temperature, taking out the electrode, and performing washing and drying to obtain the sulfoaminobiotin modified indium nitride paste electrode sensor. Compared with a common carbon paste electrode, the electrode sensor is higher in conductivity, has specific recognition performance on protein and is high in sensitivity.

Description

technical field [0001] The invention relates to a preparation method of an electrochemical sensor, in particular to a preparation method and application of a sulfabiotin-modified indium nitride paste electrode sensor. It belongs to the field of electrochemical analysis. Background technique [0002] Indium nitride is a new type of III-nitride material. The attraction of this material lies in its excellent electron transport performance and narrow energy band, which is expected to be applied to the manufacture of optoelectronic devices for new high-frequency terahertz communications. Indium nitride nanostructures are the basis for the development of related quantum devices. Since indium nitride itself has a very high background carrier concentration, and the Fermi level is above the conduction band, the band gap of the grown indium nitride can be obtained by fitting the photoluminescence spectrum through the energy band diagram and related formulas: 0.67cV, and the corresp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/48G01N27/30B82Y15/00G01N33/68
CPCG01N27/48G01N27/308B82Y15/00G01N33/6803
Inventor 李慧芝翟玉博赵可贤
Owner UNIV OF JINAN
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