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Photosensitization chemical-amplification type resist material, method for forming pattern, semiconductor device, mask for lithography, and template for nanoimprinting

A resist and light sensitization technology, which is applied in semiconductor/solid-state device manufacturing, photosensitive material processing, and photosensitive materials used in optomechanical equipment, etc., to achieve the effect of high sensitivity

Active Publication Date: 2020-08-21
TOKYO ELECTRON LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The output power and sensitivity of photolithography using electron beams, ion beams, etc. as light sources also have the same problems as EUV

Method used

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  • Photosensitization chemical-amplification type resist material, method for forming pattern, semiconductor device, mask for lithography, and template for nanoimprinting
  • Photosensitization chemical-amplification type resist material, method for forming pattern, semiconductor device, mask for lithography, and template for nanoimprinting
  • Photosensitization chemical-amplification type resist material, method for forming pattern, semiconductor device, mask for lithography, and template for nanoimprinting

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Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0040] The photo-sensitized chemically amplified resist material of this embodiment (hereinafter, simply referred to as "resist material" depending on the case) includes (1) basic components and (2) a photo-sensitizer and an acid that are generated by exposure. Element.

[0041] (1) Basic ingredients

[0042] In this embodiment, the above-mentioned (1) basic component may be an organic compound or an inorganic compound. Also, the organic compound may be a high-molecular compound or a low-molecular compound. An ideal base component is a base component that does not excessively absorb the first radiation in the pattern exposure and can form a resist pattern having a shape with sufficiently high perpendicularity. In addition, among the base components, it is desirable that the absorption of the second radiation in the one-time exposure is small and the induction of unnecessary sensitization reaction in the unexposed part is less likely to occur during the one-shot exposure.

...

no. 2 Embodiment approach

[0208] The photo-sensitized chemically amplified resist material of this embodiment (hereinafter, simply referred to as "resist material" depending on the case) includes ( 1') Basic ingredients.

[0209] (1') Basic ingredients

[0210]The above-mentioned (1') basic component may be an organic compound or an inorganic compound. Also, the organic compound may be a high-molecular compound or a low-molecular compound. Among the three groups (d) acid-photosensitizer generating group, (e) precursor group, and (f) photoacid generating group, the above-mentioned (1') basic component has only the above-mentioned (d) ) or have any two of them, or have all of the groups represented by the following (d) to (f). That is, in the present embodiment, the above-mentioned basic component is an organic compound or an inorganic compound to which groups represented by the following (d) to (f) are bonded. The above-mentioned basic component may have groups represented by the following (d) to (f...

Embodiment 1

[0431] As methyl methacrylate to which a protective group is bonded, 32.19 parts by mass (0.44 parts by mole) of the following GBLMA, 23.86 parts by mass (0.24 parts by mole) of the following MAMA, and 21.29 parts by mass (0.21 parts by mole) of the following HAMA were mixed, and 22.66 parts by mass (0.11 parts by mole) of the following PBpS-F2MAS were mixed as methyl methacrylate to which a photoacid-generating group was bonded, and they were radically polymerized, thereby synthesizing a component having (f ) a photoacid generating group methyl methacrylate polymer compound (polymer compound P). The weight average molecular weight Mw of the obtained methyl methacrylate polymer compound was 24800, and the molecular weight distribution Mw / Mn was 3.08. In addition, the above-mentioned Mw and Mw / Mn are measured by gel permeation chromatography (GPC) under the following conditions using a calibration curve based on standard polystyrene.

[0432] Apparatus: HPLC (manufactured by S...

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Abstract

The invention provides a photosensitization chemical-amplification type resist material, a method for forming a pattern using same, a semiconductor device, a mask for lithography, and a template for nanoimprinting. The photosensitization chemical-amplification type resist material according to the present invention is for use in a two-step-exposure lithography process and comprises (1) a developable base component and (2) a component that generates a photosensitizer and an acid upon light exposure. The component (2) comprises the ingredient (a) only among (a) an acid-photosensitizer generator,(b) a photosensitizer precursor, and (c) a photo-acid generator, or comprises any two or all of the three ingredients (a) to (c).

Description

[0001] The application date is February 17, 2015, and the title of the invention is "photosensitized chemically amplified resist material and pattern forming method using it, semiconductor device, photolithography mask, and nanoimprinting Template" is a divisional application with Chinese application number 201580009168.1. technical field [0002] The present invention relates to a photo-sensitized chemically amplified resist material, a pattern forming method using the photo-sensitized chemically amplified resist material, a semiconductor device, a mask for photolithography, and a template for nanoimprinting. Background technique [0003] EUV (Extreme Ultraviolet Light) lithography is attracting attention as one of the main technologies for manufacturing next-generation semiconductor devices. EUV lithography is a patterning technique that uses EUV light with a wavelength of 13.5nm as an exposure light source. According to EUV lithography, it has actually been confirmed tha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004C07C303/32C07C309/07C07C381/12C08F220/14C08F220/22C08F220/28C08F220/38G03F1/20G03F1/24G03F1/26G03F7/00G03F7/038G03F7/039G03F7/16G03F7/20G03F7/32G03F7/38H01L21/027
CPCG03F7/38G03F7/0045G03F7/0382G03F7/2041G03F7/2022G03F7/0397C08F220/283C08F220/382G03F7/0002G03F7/32G03F7/70308G03F7/70575C07C381/12C07C309/07C07C303/32H01L21/0274C08F220/14C08F220/22G03F1/20G03F1/24G03F1/26G03F7/16G03F7/2002G03F7/322
Inventor 永原诚司田川精一大岛明博
Owner TOKYO ELECTRON LTD
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