Double-gate thin film transistor and manufacturing method thereof

Abstract

The invention relates to the technical field of thin film transistors, in particular to a double-gate thin film transistor and a manufacturing method thereof. The double-gate thin film transistor comprises a substrate, an active layer located on the substrate, a dielectric layer located on the active layer, a source electrode and a drain electrode, and the source electrode and the drain electrodeare located on the two sides of the dielectric layer; the transistor comprises a first gate electrode and a second gate electrode which are located on the dielectric layer side by side; a work function difference exists between the work function of the first gate electrode and the work function of the second gate electrode; since the material of the first gate electrode and the material of the second gate electrode are different, namely work function difference exists, an acceleration electric field is formed in the channel, thereby being beneficial to increasing the mobility of carriers, reducing the sub-threshold swing, improving the bias stability of the device and reducing the off-state current of the device, and being capable of showing a better effect in a sub-threshold region.

Description

technical field [0001] The invention relates to the technical field of thin film transistors, in particular to a double-gate thin film transistor and a manufacturing method thereof. Background technique [0002] Thin film transistors are widely used in screen displays, including amorphous silicon thin film transistors, polysilicon thin film transistors, metal oxide thin film transistors, and the like. [0003] Existing thin-film transistors use a top-gate and bottom-gate double-gate structure to optimize the device to ensure the quality of screen display. Specifically, the double gate structure of the top gate type and the bottom gate type is a top and bottom structure, and the performance of the double gate transistor with this top and bottom structure is not good in the sub-threshold region. Contents of the invention [0004] In view of the above-mentioned problems, the present invention is proposed in order to provide a method for overcoming the above-mentioned problem...

AI Technical Summary

Problems solved by technology

Specifically, the double-gate structure of the top-gate type and the bottom-gate type is a top-bottom structure, and the performance of the double-gate transistor with this top-bottom structure is not good in the subthreshold region.

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