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Grating type surface incidence type optical detector

A photodetector and grating technology, applied in the field of optical communication, can solve the problems of waveguide photodetector limitations and achieve the effects of low dark current, polarization insensitive sensitivity, and large light receiving angle

Active Publication Date: 2020-09-15
INNOLIGHT TECHNOLOGY (SUZHOU) LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of this application is to provide a grating-type surface-incidence photodetector to solve the problem that the waveguide photodetector is limited by the optical coupler, and to achieve high-speed, low dark current, low loss, and polarization-insensitive high-sensitivity photodetectors. detector

Method used

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  • Grating type surface incidence type optical detector
  • Grating type surface incidence type optical detector
  • Grating type surface incidence type optical detector

Examples

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Embodiment 1

[0041] Such as figure 1 As shown, it is a schematic diagram of the chip structure of a grating-type surface-incidence photodetector according to Embodiment 1 of the present application. The detector includes a substrate 10 and a grating active layer 20 disposed on the substrate 10 . In this embodiment, the substrate 10 includes a silicon substrate 11 (ie, a silicon layer), and the grating active layer 20 includes a plurality of grating protrusions 21 . A doped layer 30 is formed on the upper surface of the silicon substrate 11, and the doped layer 30 includes a plurality of alternately arranged P-type doped electrodes 31 and N-type doped electrodes 32, and adjacent P-type doped electrodes 31 and N-type doped electrodes There is an undoped silicon region 33 between the doped electrodes 32 . The above-mentioned grating active layer 20 is disposed on the doped layer 30, and the grating protrusions 21 of the grating active layer 20 cover the undoped silicon region 33 of the doped...

Embodiment 2

[0047] The difference between this embodiment and the first embodiment is that doping is also carried out on both side walls of each grating protrusion of the grating active layer, so as to enhance the electric field intensity on the grating protrusion.

[0048] Specifically, for example, Figure 10 In the schematic diagram of the structure of the photodetector chip shown, P-type doping is performed on the side wall of the grating protrusion 21 adjacent to the P-type doped electrode 31 to form a P-type side wall 22, and the P-type side wall 22 and the P-type doped electrode 31 is conductively connected to form an electric field between the P-type doped electrode 31 and the N-type doped electrode 32 , and between the P-type sidewall 22 and the N-type doped electrode 32 to enhance the electric field intensity on the grating protrusion 21 . Alternatively, N-type doping can be carried out on the side wall of the grating protrusion adjacent to the N-type doped electrode to form an ...

Embodiment 3

[0053] Such as Figure 13 The structural diagram of the photodetector chip shown is different from the above-mentioned embodiments 1 and 2 in that the upper surface of the undoped silicon region 33 in this embodiment is lower than the P-type doped electrodes 31 and N-type doped electrodes 31 on both sides thereof. The upper surface of the impurity electrode 32 forms a groove 34 at the undoped silicon region 33 , and the bottom of each grating protrusion 21 covering the doped layer 30 covers the bottom of the corresponding groove 34 . in such as Figure 13 In the cross section shown, the cross section of the groove 34 may be a regular rectangle, or the bottom of the groove 34 may also be in other shapes such as arc or trapezoid. The depth of the groove 34 is less than the thickness of the grating active layer 20 , or less than or equal to the thickness of the doped layer 30 . This structure enables the grating active layer 20 and the doped layer 30 to have more overlapping ar...

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Abstract

The invention discloses an optical grating type surface incidence type optical detector, which comprises: a substrate; and a grating active layer arranged on the substrate and comprising a plurality of grating bulges, wherein a doped layer is formed on the upper surface layer, close to the grating active layer, of the substrate, and comprises a plurality of P type doped electrodes and N type dopedelectrodes which are arranged alternately, undoped silicon regions are arranged between the adjacent P type doped electrodes and N type doped electrodes, and the grating bulges cover the undoped silicon region, and one side of the P type doped electrode and one side of the N type doped electrode on the two sides of the undoped silicon region. By adopting the design of the optical grating type enhanced absorption layer and the silicon layer contact electrode, a surface incident optical coupling mode is realized, the problem that a waveguide type optical detector is limited by an optical coupler is avoided, a high-speed, low-dark-current, low-loss and polarization-insensitive high-sensitivity optical detector is realized, and a larger optical receiving angle is achieved.

Description

technical field [0001] The present application relates to the technical field of optical communication, in particular to a grating-type surface-incidence photodetector. Background technique [0002] A high-performance photodetector is one of the core devices of high-speed optical communication. Surface-incidence light-receiving devices have great advantages for spatial light or low-power reception. But as the demand for bandwidth is getting higher and higher, since the bandwidth of the photodetector is more limited by the RC time constant, higher speed can improve the bandwidth by optimizing the contact resistance of the metal-semiconductor interface. At present, the single crystal silicon contact (Si-contact) can be used to replace the germanium contact (Ge-contact) in the waveguide-based photodetector to reduce the contact resistance of the metal-semiconductor contact surface and optimize the RC time constant , in order to try to increase the bandwidth of the waveguide ph...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/103H01L31/054H01L31/0216H01L31/0224
CPCH01L31/103H01L31/0547H01L31/02161H01L31/022408Y02E10/52
Inventor 曾治国陈国良李显尧孙雨舟萧越
Owner INNOLIGHT TECHNOLOGY (SUZHOU) LTD
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