Etching composition and etching method using same

A composition and etching technology, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problems of reduced adhesion between copper film and molybdenum film, overetching of etching composition, molybdenum alloy residue, etc., and achieve excellent etching Performance, low cone angle, performance-enhancing effects

Pending Publication Date: 2020-09-29
ENF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] When the barrier metal is titanium or molybdenum alloy, the etching process has the disadvantage that it can only be etched with specific ions or specific conditions due to the chemical properties of titanium. When the barrier metal is molybdenum, the etching process has the adhesion between the copper film and the molybdenum film. Reduced disadvantages
Especially in the portion where the adhesion between the copper film and the molybdenum film is reduced, the overetching phenomenon caused by the penetration of the etching composition is severe
However, if the etching rate of the molybdenum alloy is reduced in order to solve the overetching phenomenon, the residue of the molybdenum alloy will be induced
[0007] In particular, when aluminum is used for electrode wiring in order to realize a large display, defects occur in subsequent processes due to the angle formed by the taper angle.

Method used

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  • Etching composition and etching method using same
  • Etching composition and etching method using same
  • Etching composition and etching method using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0114] Hydrogen peroxide 20% by weight, iminodiacetic acid (Iminodiacetic acid, IDA) 3% by weight, adenine 0.1% by weight, ammonium fluoride (Ammonium fluoride, AF) 0.1% by weight, and the ingredients described in the following Table 1 It was mixed with the rest of water to prepare an etching composition.

Embodiment 2 to 7

[0116] In Example 1, except having changed the component and content described in following Table 1, it implemented by the method similar to Example 1, and manufactured the etching composition.

experiment example 1

[0132] [Experimental Example 1] Etching characteristic evaluation

[0133] Evaporate the thickness in turn on the glass substrate The copper film and molybdenum film were used to manufacture test pieces. A photoresist process was performed on the test piece to form a patterned resist film, and the copper and molybdenum films were etched using the etching compositions of Examples 1 to 7 and Comparative Examples 1 to 5, respectively. At this time, in the above-mentioned etching step, etching was performed by adding 50% overetching to EPD (end point detection) measured at 32° C. with a sprayable equipment (Mini-etcher ME-001). Regarding the EPD measurement, it was measured by visually observing the color change of the test piece during etching, and using a scanning electron microscope (Hitachi, S-4800) to observe whether the taper angle, molybdenum residue, and undercut according to the number of sheets processed occurred.

[0134] The results are described in Table 2 below. ...

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Abstract

The present invention relates to an etching composition and a method for etching a metal film by using the same. Specifically, the present invention provides the etching composition for improving etching characteristics of a single metal film or a multi-metal film, a method for etching the metal film by using the etching composition, and a method for manufacturing a semiconductor element includinga step performed by using the etching composition of the present invention.

Description

technical field [0001] The present invention relates to an etching composition and an etching method using the same. More specifically, it relates to an etching composition, a method of etching a metal film using the same, and a semiconductor element including steps performed using the etching composition of the present invention. Manufacturing method. Background technique [0002] Microcircuits such as semiconductor devices and TFT-LCDs are completed through a series of photolithography processes as follows. That is, the photoresist is evenly coated on the conductive metal film such as aluminum, aluminum alloy, copper and copper alloy or the insulating film such as silicon oxide film and silicon nitride film formed on the substrate, and then passes through the patterned mask. After irradiating light, the photoresist with the desired pattern is formed by development, and after the pattern is transferred to the metal film or insulating film existing under the photoresist by ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/18C23F1/26C23F1/30H01L21/306
CPCC23F1/18C23F1/26C23F1/30H01L21/30604
Inventor 李明翰案缟源李龙儁池祥源朴锺模金世训
Owner ENF TECH
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