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Method for preparing light absorption layer film of perovskite solar cell

A solar cell and perovskite technology, applied in the field of solar cells, can solve the problem of inability to synergize the preparation of perovskite nanocrystals and nanowires, and achieve the effects of improving photovoltaic performance, reducing recombination, and promoting transmission.

Active Publication Date: 2020-10-02
ENERGY RES INST OF JIANGXI ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to overcome the problem that the prior art cannot synergistically prepare perovskite nanocrystals and nanowires, the present invention provides a method for preparing a perovskite solar cell light-absorbing layer film. In the process of preparing the perovskite light-absorbing layer, perovskite Synergistic growth of perovskite nanocrystals and nanowires on a hybrid material of ore and conjugated organic molecules with a surface protection film can obtain perovskite films with interpenetrating network structure and large grain size

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  • Method for preparing light absorption layer film of perovskite solar cell
  • Method for preparing light absorption layer film of perovskite solar cell
  • Method for preparing light absorption layer film of perovskite solar cell

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Embodiment 1

[0036] Step 1: Prepare 0.8 M (FAPbI 3 ) x (MAPbBr 3 ) 1-x (where x = 0.9) solution, using a mixed solvent of DMSO and DMF (the volume ratio of DMF and DMSO is 4:1), fully stirred to obtain a perovskite precursor solution, the mass fraction of the perovskite precursor solution is 0.5 wt% 7,7,8,8-Tetracyanoquinodimethane (TCNQ);

[0037] Step 2: On clean FTO / TiO 2 The perovskite and TCNQ mixed material solution in step 1 was added dropwise on the surface of the substrate, and then segmented spin coating was used (first segment: spin coating at 1000 rpm for 10 s; second segment: at 5000 rpm Spin coating for 30 s), add 200 μL of chlorobenzene anti-solvent dropwise at the remaining 15 s of the second spin coating time, and attach a layer of PE protective film on the surface after the spin coating to slow down the solvent volatilization, first heat at 50 °C for 15 s, then heated and annealed at 100 °C for 60 min, uncovered the protective film and cooled to room temperature natu...

Embodiment 2

[0040] Step 1: Prepare 0.8 M (FAPbI 3 ) x (MAPbBr 3 ) 1-x (where x = 0.9) solution, using a mixed solvent of DMSO and DMF (the volume ratio of DMF and DMSO is 4:1), fully stirred to obtain a perovskite precursor solution, and mixed with a mass fraction of 8 wt in the perovskite precursor solution % of benzoquinone;

[0041] Step 2: On clean FTO / TiO 2 Add the mixed material solution of perovskite and benzoquinone in Step 1 dropwise on the surface of the substrate, and then use segmental spin coating (first segment: spin coating at 1000 rpm for 10 s; second segment: spin coating at 5000 rpm spin coating for 30 s), add 200 μL of chlorobenzene anti-solvent dropwise at the remaining 15 s of the second spin coating time, and attach a layer of PI protective film on the surface after the spin coating to slow down the solvent volatilization, and heat it at 50 °C first 15 s, then heated and annealed at 100 °C for 60 min, uncovered the protective film and naturally cooled to room te...

Embodiment 3

[0044] Step 1: Prepare 0.8 M (FAPbI 3 ) x (MAPbBr 3 ) 1-x (where x = 0.9) solution, using a mixed solvent of DMSO and DMF (the volume ratio of DMF and DMSO is 4:1), fully stirred to obtain a perovskite precursor solution, mixed with a mass fraction of 5 wt % of 1-butyl-3-methyl-imidazolium bromide (BMIBr) ionic liquid;

[0045] Step 2: On clean FTO / TiO 2 Add the mixed material solution of perovskite and BMIBr ionic liquid in step 1 dropwise on the surface of the substrate, and then use segmental spin coating (first segment: spin coating at 1000 rpm for 10 s; second segment: spin at 5000 rpm Spin coating at the speed of 30 s), add 200 μL of chlorobenzene anti-solvent dropwise during the remaining 15 s of the second spin coating time, and attach a layer of PET protective film on the surface after the spin coating to slow down the solvent volatilization. Heating at 100 °C for 15 s, then heating and annealing at 100 °C for 60 min, removing the protective film and cooling to r...

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Abstract

The invention discloses a method for preparing a perovskite solar cell light absorption layer film. The method comprises the following steps: preparing a perovskite and conjugated organic molecule mixed material solution; dropwise adding a perovskite and conjugated organic molecule mixed material solution on the surface of a clean substrate, starting spin coating, dropwise adding a perovskite anti-solvent after the perovskite and conjugated organic molecule mixed material solution uniformly covers the surface of the substrate, and continuing spin coating; and after spin coating is completed, attaching a layer of protective film to the surface of the substrate to slow down solvent volatilization, heating and annealing the substrate, uncovering the protective film, and naturally cooling to the room temperature, so that the perovskite nanocrystalline and nanowire film growing cooperatively can be obtained on the substrate. In the process of preparing the perovskite light absorption layer,perovskite and conjugated organic molecule mixed materials are matched with a surface protection film to grow perovskite nanocrystals and nanowires cooperatively, so that the perovskite thin film with an interpenetrating network structure and a large grain size can be obtained.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and relates to a method for preparing a light-absorbing layer thin film of a perovskite solar cell. Background technique [0002] Perovskite materials originally refer to CaTiO3 materials, later scientists collectively refer to materials with the same crystal structure as CaTiO3 materials as perovskite materials, and the general formula is ABX 3 . Organic-inorganic hybrid perovskite materials have become a promising semiconductor material due to their advantages such as tunable band gap, high light absorption coefficient, and high photoelectric conversion efficiency. [0003] The research on the preparation method of perovskite nanomaterials has a long history. For example, Chinese patents 201310257024.0 and 201310651418.4 use the two-step spin coating method of the solution method to prepare perovskite nanocrystalline films; Chinese patent 201410244599.3 uses the solution method for one-ste...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/44H01L51/48
CPCH10K71/12H10K30/00H10K30/80Y02E10/549
Inventor 韩飞席细平王玲玲范敏罗成龙陈泊宏
Owner ENERGY RES INST OF JIANGXI ACAD OF SCI