CMOS device in BCD process and manufacturing method thereof

Abstract

The invention discloses a CMOS device in a BCD process. The CMOS device comprises a first MOS transistor with a channel conduction type of a first conduction type, and an LDMOS device comprises a first LDMOS with a channel conduction type of a second conduction type; a second conduction type doped first doped region is formed in a second conduction type first well region on the source region sideof the first MOS transistor, and the first doped region also forms a drift region of the first LDMOS. A first lightly doped drain region doped with the first conductivity type is formed in the first well region on the drain region side of the first MOS transistor. The first source region and the first drain region are formed on the surfaces of the first doped region and the first lightly doped drain region on the two sides of the first gate structure respectively. The invention further discloses a manufacturing method of the CMOS device in the BCD process. According to the invention, the high-voltage CMOS device can be realized, the short-channel effect of the device can be delayed, and the breakdown voltage of the device can be ensured without adding an additional process, so the size ofthe device can be further reduced, the conduction current is improved, and the conduction resistance is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a CMOS device in a BCD process. The invention also relates to a manufacturing method of the CMOS device in the BCD process. Background technique [0002] The BCD process is a bipolar transistor (Bipolar)-CMOS-DMOS process, which can simultaneously integrate bipolar transistors, CMOS and DMOS on a semiconductor substrate such as a silicon substrate. CMOS includes NMOS and PMOS, and DMOS includes LDMOS. [0003] Such as figure 1 Shown is a schematic structural diagram of a MOS transistor of a CMOS device in an existing BCD process. The MOS transistor includes NMOS and PMOS. Taking NMOS as an example, the MOS transistor includes: [0004] A P-type doped first well region 2, the first well region 2 is formed on a semiconductor substrate 1; usually, the semiconductor substrate 1 is a silicon substrate, and the doping type is P-type, and it can also be f...

AI Technical Summary

Problems solved by technology

With the continuous shortening of the device channel, the shortening of the effective length of the device channel caused by the introduction of LDD becomes non-negligible

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