Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Multiple layer system, method of manufacture and saw device formed on the multiple layer system

A layer system and device technology, applied in the field of multi-layer systems, manufacturing and SAW devices formed on multi-layer systems, can solve problems such as impossible effective coupling coefficients

Pending Publication Date: 2020-10-20
RF360新加坡私人有限公司
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, even when utilizing AlN layers with significant levels of, for example, Sc doping, ultimately limiting the combination of SAW structures and AlN-based thin piezoelectric films to some applications requiring only small filter bandwidths, it is almost impossible to exploit this Designed to achieve higher than 5% effective coupling coefficients for microacoustic resonators

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multiple layer system, method of manufacture and saw device formed on the multiple layer system
  • Multiple layer system, method of manufacture and saw device formed on the multiple layer system
  • Multiple layer system, method of manufacture and saw device formed on the multiple layer system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] figure 1 The location of the R-plane within the sapphire crystal is shown schematically.

[0038] An AlScN layer with a Sc content of 40 mol% can be epitaxially grown directly onto this R-plane sapphire wafer. In this case, the [11-20] direction of the AlScN layer is perpendicular to the substrate surface (x-cut AlScN). According to an advantageous embodiment, a seed layer system, eg made of pure and undoped AlN, can be grown on the sapphire substrate as an underlayer. This AlN layer can support epitaxial growth. The thickness of the seed layer can be as thin as 30 nm, but can be adjusted as needed.

[0039] For epitaxial growth of AlScN layer on the seed layer, the deposition technique is selected from metal organic CVD (MOCVD), plasma enhanced CVD (PECVD), molecular beam epitaxy (MBE), atomic layer deposition (ALD), sol-gel Deposition, high temperature sputtering and pulsed laser deposition of PLD.

[0040] Furthermore, due to the fact that the speed of sound wit...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
heightaaaaaaaaaa
heightaaaaaaaaaa
Login to View More

Abstract

A layer system especially for forming SAW devices thereon is proposed comprising a monocrystalline sapphire substrate having a first surface and a crystalline piezoelectric layer comprising A1N, deposited onto the first surface, and having a second surface. As a first surface a crystallographic R-plane of sapphire is used enabling an orientation of c-axis of the piezoelectric layer parallel to thefirst and second surfaces.

Description

technical field [0001] The present invention relates to a layer system comprising a thin piezoelectric film, a manufacturing method and a SAW device formed on a layer system having a piezoelectric layer. Background technique [0002] In recent years, standard SAW technology based on lithium tantalate LT wafers to realize RF filters in the range of 500MHz to 3GHz has been increasingly used by advanced micro-acoustic technologies such as BAW or temperature compensated SAW ) in order to meet the increasing performance requirements for mobile phone systems. [0003] WCDMA and LTE based mobile phones require the lowest loss RF filters, duplexers and multiplexers to support advanced RF concepts such as carrier aggregation, diversity antennas and MIMO concepts or new modulation schemes. With the new 5G standard, the requirements for micro-acoustic devices will be further increased with respect to several key characteristics, such as lowest losses, reduced temperature drift with te...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/08H03H9/02H10N30/00H10N30/01H10N30/079
CPCH03H3/08H03H9/02228H03H9/02574H10N30/079H10N30/708H03H9/02834H03H9/145H03H9/25
Inventor T·梅茨格木原善和T·波拉德
Owner RF360新加坡私人有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com