Multiple layer system, method of manufacture and saw device formed on the multiple layer system

A layer system and device technology, applied in the field of multi-layer systems, manufacturing and SAW devices formed on multi-layer systems, can solve problems such as impossible effective coupling coefficients

Pending Publication Date: 2020-10-20
RF360新加坡私人有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, even when utilizing AlN layers with significant levels of, for example, Sc doping, ultimately limiting the combination of SAW structures and AlN-based thin piezoelectric films to some applications requiring only small filter bandwidths, it is almost impossible to exploit this Designed to achieve higher than 5% effective coupling coefficients for microacoustic resonators

Method used

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  • Multiple layer system, method of manufacture and saw device formed on the multiple layer system
  • Multiple layer system, method of manufacture and saw device formed on the multiple layer system
  • Multiple layer system, method of manufacture and saw device formed on the multiple layer system

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Embodiment Construction

[0037] figure 1 The location of the R-plane within the sapphire crystal is shown schematically.

[0038] An AlScN layer with a Sc content of 40 mol% can be epitaxially grown directly onto this R-plane sapphire wafer. In this case, the [11-20] direction of the AlScN layer is perpendicular to the substrate surface (x-cut AlScN). According to an advantageous embodiment, a seed layer system, eg made of pure and undoped AlN, can be grown on the sapphire substrate as an underlayer. This AlN layer can support epitaxial growth. The thickness of the seed layer can be as thin as 30 nm, but can be adjusted as needed.

[0039] For epitaxial growth of AlScN layer on the seed layer, the deposition technique is selected from metal organic CVD (MOCVD), plasma enhanced CVD (PECVD), molecular beam epitaxy (MBE), atomic layer deposition (ALD), sol-gel Deposition, high temperature sputtering and pulsed laser deposition of PLD.

[0040] Furthermore, due to the fact that the speed of sound wit...

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Abstract

A layer system especially for forming SAW devices thereon is proposed comprising a monocrystalline sapphire substrate having a first surface and a crystalline piezoelectric layer comprising A1N, deposited onto the first surface, and having a second surface. As a first surface a crystallographic R-plane of sapphire is used enabling an orientation of c-axis of the piezoelectric layer parallel to thefirst and second surfaces.

Description

technical field [0001] The present invention relates to a layer system comprising a thin piezoelectric film, a manufacturing method and a SAW device formed on a layer system having a piezoelectric layer. Background technique [0002] In recent years, standard SAW technology based on lithium tantalate LT wafers to realize RF filters in the range of 500MHz to 3GHz has been increasingly used by advanced micro-acoustic technologies such as BAW or temperature compensated SAW ) in order to meet the increasing performance requirements for mobile phone systems. [0003] WCDMA and LTE based mobile phones require the lowest loss RF filters, duplexers and multiplexers to support advanced RF concepts such as carrier aggregation, diversity antennas and MIMO concepts or new modulation schemes. With the new 5G standard, the requirements for micro-acoustic devices will be further increased with respect to several key characteristics, such as lowest losses, reduced temperature drift with te...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/08H03H9/02
CPCH03H3/08H03H9/02228H03H9/02574H10N30/10516H10N30/079H03H9/02834H03H9/145H03H9/25
Inventor T·梅茨格木原善和T·波拉德
Owner RF360新加坡私人有限公司
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