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Phase shift photomask residual defect processing method and system and phase shift photomask

A phase-shift mask and defect processing technology, applied in the field of semiconductor manufacturing, can solve the problems of waste of production capacity and lengthy process of lithography machines

Pending Publication Date: 2020-10-27
泉意光罩光电科技(济南)有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In the prior art, for the metal residue on the phase shift layer, the usual practice is to re-run the 2-layer process flow for the mask with chromium metal residue defects, that is, to re-expose the entire 2-layer exposure pattern, the process is lengthy, and only The entire film can be exposed through the lithography machine, resulting in waste of production capacity of the lithography machine

Method used

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  • Phase shift photomask residual defect processing method and system and phase shift photomask
  • Phase shift photomask residual defect processing method and system and phase shift photomask
  • Phase shift photomask residual defect processing method and system and phase shift photomask

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no. 1 example

[0028] The embodiment of the present invention provides a phase-shift mask residual defect processing system, which can effectively solve the metal residue on the phase-shift layer, and can also avoid the waste of production capacity of the photolithography machine, reduce the time spent on defect processing, and shorten the time-consuming process flow .

[0029] The phase shift mask residual defect processing system provided in this embodiment includes a machine, a photoresist coater, a laser device, an etching device, a cleaning device, and a detection device, wherein the photoresist coater is used for the phase shift layer The photoresist layer is coated on the top; the laser equipment is used to partially expose the position corresponding to the defect on the photoresist layer; the etching equipment is used to partially etch the developed photoresist layer; the cleaning equipment is used to remove the photoresist layer. Resist layer; detection equipment is used to detect t...

no. 2 example

[0042] see Figure 1 to Figure 7 , the present embodiment provides a method for processing residual defects of a phase-shift mask, which is applicable to the system for processing residual defects of a phase-shift mask provided in the first embodiment, and the method includes the following steps:

[0043] S1: Coating a photoresist layer 170 on the phase shift layer 110 .

[0044] Specifically, a photoresist is coated on the phase shift layer 110 of the phase shift mask 100 by using a photoresist coater, wherein the photoresist layer 170 is covered on the phase shift layer 110, and the photoresist layer 170 is formed. . The phase shift mask 100 includes a quartz plate 150, a phase shift layer 110 covering the surface of the quartz plate 150, and a chromium layer 130 covering the edge surface of the phase shift layer 110, wherein the phase shift layer 110 is generally silicon molybdenum. In this embodiment, the photoresist layer 170 covers the defect positions and the chromium...

no. 3 example

[0065] Please continue to see Figure 7 , the present embodiment provides a phase shift mask 100, which is manufactured after the method for treating residual defects in the phase shift mask provided in the second embodiment.

[0066] In this embodiment, the phase-shift mask 100 provided in this embodiment needs to be processed for the metal residual defects on the phase-shift layer 110 before shipment after being shaped by the manufacturing method. For the specific processing process, please refer to the second embodiment related content in the example.

[0067] The phase shift mask 100 provided in this embodiment includes a quartz plate 150, a phase shift layer 110, and a chromium layer 130. The phase shift layer 110 covers the surface of the quartz plate 150, and the chromium layer 130 covers the edge surface of the phase shift layer 110. The area of ​​the displacement layer 110 not covered by the chromium layer 130 is provided with chip patterns expected to be replicated ...

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Abstract

The invention provides a phase shift photomask residual defect processing method and system and a phase shift photomask, relating to the technical field of semiconductor manufacturing. According to the invention, a local exposure technology is adopted, compared with the prior art that the process is carried out once again and a comprehensive exposure technology is adopted, the local exposure and development are carried out on the photoresist layer in the defect area, the defect position is leaked, and etching is carried out after etching, so that the metal defects can be accurately processed,exposure processing on the whole piece is avoided, the defect processing time is shortened, the processing flow time is shortened, meanwhile, due to the fact that the exposure range is small, local exposure can be carried out through laser equipment, a photoetching machine is prevented from being used, and the waste of the productivity of the photoetching machine is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method and system for processing residual defects in a phase shift mask and a phase shift mask. Background technique [0002] The phase shift mask is a device that uses the phase shift layer to convert the phase of the light source of the lithography machine in the chip factory and increase the laser luminous flux to enhance the laser's ability to analyze the reaction of the photoresist. If the phase-shift mask has residual defects on the phase-shift layer, it will inevitably affect the chip quality, so the chromium metal residual defects on the phase-shift layer must be processed before the mask is shipped. [0003] In the prior art, for the metal residue on the phase shift layer, the usual method is to re-run the 2-layer process flow for the mask with chromium metal residue defects, that is, to re-expose the entire 2-layer exposure pattern, the process is ...

Claims

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Application Information

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IPC IPC(8): G03F1/26G03F1/72G03F1/80G03F1/82G03F1/84G03F7/16H01L21/027H01L21/033
CPCG03F1/72G03F1/80G03F1/84G03F1/26G03F1/82G03F7/16H01L21/0272H01L21/0331
Inventor 萧志伟查思豪蔡奇澄简永浩
Owner 泉意光罩光电科技(济南)有限公司
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