Cleaning method of single polycrystalline battery piece recovery piece

Abstract

The invention discloses a cleaning method of a single polycrystalline battery piece recovery piece. The method comprises the following steps: crushing a single polycrystalline battery piece recovery piece into small fragments with the area of about 8cm < 2 >; putting the small fragments into a hydrofluoric acid solution; soaking for 15 minutes after uniform stirring, after soaking, fishing out thesmall fragments and putting the small fragments into a mixed solution of nitric acid and hydrofluoric acid for reaction; stirring for 5 minutes, after the reaction is fully carried out, taking out small fragments of the battery piece; neutralizing acidic substances on small fragments of the battery piece by using sodium hydroxide; cleaning small fragments of the battery piece by using a cleaningdevice for multiple times to remove reacted residues on the small fragments, measuring the pH value of the rinsed liquid, rinsing until the measured pH value of the rinsed liquid is about 7 hours, andcleaning the four sides of the small fragments by using ultrasonic waves after rinsing is completed. According to the cleaning method for the pool piece recovery piece, the silicon element recyclingrate is increased, the steps are simple, and operation is easy.

Description

technical field [0001] The present invention relates to the field, in particular to a method for cleaning single-polycrystalline cell recycling sheets. Background technique [0002] It is particularly important to save energy and reduce emissions and improve the utilization of renewable resources. Under such a large social development background, the solar photovoltaic industry has encountered an unprecedented opportunity. The development of the photovoltaic industry will greatly increase the demand for silicon materials, so the recycling and reuse of waste silicon materials will help reduce the cost of solar energy materials, promote the rapid development of the industry, and accelerate the entry into the era of low-cost photovoltaic power generation. In the process of growing single crystal by Czochralski method, the introduction of excess impurity atoms will generate a large number of point dislocations and line dislocations. The introduction of a large number of disloc...

AI Technical Summary

Problems solved by technology

When the polycrystalline ingot method is used to produce solar-grade polycrystalline, the introduction of excessive impurities can cause polycrystalline impurity separation and reduce the electrical properties of the material, resulting in a large number of low-efficiency silicon wafers after batteryization, or attenuation wafers, etc., reducing the material quality

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