Rapid turn-off RC-IGBT device with back double-MOS structure

Abstract

The invention relates to a rapid turn-off RC-IGBT device with a back double-MOS structure, and belongs to the technical field of semiconductors. The device comprises a gate contact region 1, an emitter contact region 2, a metal field plate 3, a collector contact region 4, an emitter 5, a cellular region P-type well 6,a transition region P-type well 7, a first field limiting ring 8, a second fieldlimiting ring 9, a third field limiting ring 10, an N-type collector 11, an N-type buffer layer 12, a P-type collector 13, an N-type drift region 14, a gate oxide layer 15, a field oxide layer 16, a collector oxide layer 17, a field stop ring contact region 18, a field stop ring 19 and a collector P-base 20. On the premise of ensuring elimination of the negative resistance effect during forward conduction, the device has relatively high turn-off speed, relatively low Von, good reverse conduction performance and voltage endurance capability of more than 600V, and the working stability and the current capability of the device are improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors and relates to a fast turn-off RC-IGBT device with double MOS structures on the back. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a composite fully controlled type composed of BJT (Bipolar Junction Transistor) bipolar transistor and MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) insulated gate field effect transistor It is a voltage-driven power semiconductor device, so it has both the advantages of high input impedance of MOSFET and low conduction voltage drop of BJT. The IGBT combines the advantages of the above two devices, with low driving power and low saturation voltage. Therefore, it will become one of the core components of intelligent power integrated circuits and is widely used in home appliances, environmentally friendly automobiles and industrial production. It is a semiconductor power device with great potential in the future market. ...

AI Technical Summary

Problems solved by technology

In the existing design, the freewheeling diodes of such devices are vertically integrated in the cell area, and the P-body in the cell area provides holes for the anode of the freewheeling diode, so the voltage drop above the P-type collector when it is turned off Larger, there are longer tail currents, unsatisfactory breakdown voltage BV, and turn-off loss E off or forward voltage drop V on Larger issues

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