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Perovskite photoelectric detector based on active layer interface optimization and preparation method thereof

A photodetector, interface optimization technology, applied in photovoltaic power generation, electric solid state device, semiconductor/solid state device manufacturing, etc. The problem of poor uniformity of the crystal film, etc., can improve the light detection performance, suppress the dark current, and improve the environmental stability.

Inactive Publication Date: 2020-11-03
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, although perovskite has excellent photoelectric properties, its perovskite structure is extremely unstable. Generally, the prepared perovskite polycrystalline film has poor uniformity and large particle size differences, resulting in a large density of grain boundary defects. Not only will it increase the probability of carrier recombination and reduce the detection efficiency of photodetectors, but also the grain boundaries will easily capture water and gas molecules, which will accelerate the decomposition of perovskite grains and further affect the stability of the device.
At the same time, the poor contact between the perovskite active layer and the carrier transport layer will hinder the transport of carriers at the interface, which is not conducive to the extraction and collection of carriers.

Method used

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  • Perovskite photoelectric detector based on active layer interface optimization and preparation method thereof
  • Perovskite photoelectric detector based on active layer interface optimization and preparation method thereof

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Embodiment 1

[0034] Such as figure 1 As shown, the present invention discloses a perovskite photodetector based on the optimization of the interface of the active layer. The photodetector adopts a positive structure, and the order from bottom to top is: substrate, transparent conductive ITO anode, hole transport layer , a perovskite photoactive layer, an electron transport layer, a cathode buffer layer, and a metal cathode; the method for optimizing the interface of the active layer is to mix polymer PFN with a mass volume ratio of 0.01-0.5 mg / mL in the anti-solvent , and the perovskite photoactive layer was prepared by a one-step spin-coating method.

Embodiment 2

[0035] Embodiment 2 (control group):

[0036] A method for preparing a perovskite photodetector, comprising the following steps: cleaning a substrate composed of a transparent substrate and a transparent conductive cathode ITO whose surface roughness is less than 1 nm, and blowing dry with nitrogen gas after cleaning; Spin-coat TAPC solution (2500rpm 40s) on the ITO surface, and perform thermal annealing treatment (120°C, 20min) to prepare a hole transport layer; spin-coat CH on the hole transport layer 3 NH 3 PB 3 Solution (4000rpm 25s), 300μL chlorobenzene was added dropwise as an anti-solvent while rotating for 9s, and thermal annealing was performed (110°C, 20min) to prepare the photoactive layer; PC was spin-coated on the surface of the photoactive layer 61 BM solution (4000rpm40s), and carry out thermal annealing treatment (110 ℃, 20min) to prepare hole transport layer; On the hole transport layer, evaporate the cathode buffer layer Bphen (1nm); On the cathode buffer l...

Embodiment 3

[0038] A method for preparing a perovskite photodetector based on active layer interface optimization, comprising the following steps: cleaning a substrate composed of a transparent substrate and a transparent conductive cathode ITO whose surface roughness is less than 1 nm, and blowing it with nitrogen gas after cleaning Dry; spin-coat TAPC solution (2500rpm 40s) on the surface of transparent conductive cathode ITO, and perform thermal annealing treatment (120°C, 20min) to prepare a hole transport layer; spin-coat CH on the hole transport layer 3 NH 3 PB 3 Solution (4000rpm 25s), 300μL of chlorobenzene doped with 0.01mg / mL PFN was added dropwise when rotating for 9s as an anti-solvent, and thermal annealing was performed (110°C, 20min) to prepare the photoactive layer; Spin coating on the surface of the photoactive layer PC 61BM solution (4000rpm 40s), and thermal annealing treatment (110°C, 20min) to prepare the hole transport layer; evaporate the cathode buffer layer Bphe...

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Abstract

The invention discloses a perovskite photoelectric detector based on active layer interface optimization and a preparation method thereof, and belongs to the field of perovskite photovoltaic devices or perovskite photoelectric detectors. The perovskite photoelectric detector comprises a perovskite photoactive layer, a polymer PFN with the mass volume of 0.01-0.5 mg / mL is doped in an anti-solvent,and the perovskite photoactive layer is prepared through a one-step spin coating method. According to the invention, the polymer PFN is doped in the anti-solvent to passivate defects in a perovskite grain boundary, so the carrier transport capability is improved, and the optical detection performance of the device is further improved; meanwhile, an ultrathin PFN modification layer is formed between the perovskite photoactive layer and the electron transmission layer, thereby improving the contact between the perovskite photoactive layer and the electron transmission layer, and facilitating thetransmission of carriers between interfaces.

Description

technical field [0001] The invention belongs to the field of perovskite photovoltaic devices or perovskite photodetectors, in particular to a perovskite photodetector based on active layer interface optimization and a preparation method thereof. Background technique [0002] As a medium, light can transmit both energy and information. In today's high-speed information age, the information transmission function of light is becoming more and more important. A photodetector is a device that converts optical signals into electrical signals to facilitate information processing, analysis, and storage. It is the core component of an optoelectronic system. widely used. The material of the photoactive layer that plays the role of photoconversion plays a decisive role in the performance of the photodetector. Perovskite materials are innovative materials in the field of photovoltaics. They have the characteristics of high carrier mobility, long exciton diffusion length, low binding ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/46H01L51/44H01L51/42H01L51/48
CPCH10K71/12H10K85/10H10K71/40H10K30/211H10K30/80Y02E10/549
Inventor 于军胜黄钰杨根杰赵世雄
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA