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Preparation method for aluminum-silicon alloy micro-arc oxidation film layer

A micro-arc oxidation, aluminum-silicon alloy technology, applied in anodizing, coating, surface reaction electrolytic coating, etc., can solve the performance degradation of film hardness, wear resistance, corrosion resistance, etc. Density reduction and other problems, to overcome the large power loss, reduce the content of mullite phase, reduce the content of silicon phase

Active Publication Date: 2020-11-06
DONGGUAN UNIV OF TECH
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  • Abstract
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Problems solved by technology

These mullite impurity phases will be doped in the alumina film layer in a disordered manner, resulting in a decrease in the compactness of the micro-arc oxidation film layer on the entire aluminum-silicon alloy surface, and at the same time leading to a decrease in the hardness and wear resistance of the film layer. , corrosion resistance and other performance decreased significantly

Method used

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  • Preparation method for aluminum-silicon alloy micro-arc oxidation film layer
  • Preparation method for aluminum-silicon alloy micro-arc oxidation film layer
  • Preparation method for aluminum-silicon alloy micro-arc oxidation film layer

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Embodiment 1

[0033] Embodiment 1 of the present invention is: a method for preparing an aluminum-silicon alloy micro-arc oxidation film layer, comprising the following steps: performing pre-etching treatment on the aluminum-silicon alloy substrate 1, and then performing micro-arc oxidation treatment to obtain such figure 1 The aluminum-silicon alloy with the micro-arc oxidation film layer 2 on the surface is shown.

[0034] Among them, the pre-etching treatment specifically includes:

[0035] 1) Using ZL102 aluminum-silicon alloy as the base material, prepare a sample with a size of 20mm×20mm×4mm, and use a sodium hydroxide solution with a concentration of 40g / L and a sodium silicate solution with a concentration of 10g / L. Degreasing and degreasing treatment is carried out under the temperature condition of 50~60℃;

[0036] 2) Cleaning with distilled water to remove the residual lye on the surface of the substrate;

[0037] 3) Using a mixed acid solution with a concentration of 40% hydro...

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Abstract

The invention discloses a preparation method for an aluminum-silicon alloy micro-arc oxidation film layer. The preparation method for the aluminum-silicon alloy micro-arc oxidation film layer comprises the following steps of S1, pretreatment: removing silicon elements on the surface of an aluminum-silicon alloy substrate; and S2, micro-arc oxidation: placing the aluminum-silicon alloy treated in the step S1 in an alkaline electrolyte for micro-arc oxidation treatment, wherein a constant-voltage micro-arc oxidation mode or a segmented constant-current micro-arc oxidation mode is adopted in themicro-arc oxidation process, and the alkaline electrolyte mainly contains aluminate but contains no silicon elements. According to the scheme provided by the invention, the content of the loose porousmullite phase in the aluminum-silicon alloy micro-arc oxidation film layer is reduced, the structure compactness of the film layer is improved, the section of the film layer is changed in a gradientmode, the purpose of efficiently preparing the micro-arc oxidation ceramic film layer with excellent performance on the surface of the aluminum-silicon alloy is achieved, and the surface-strengthenedaluminum-silicon alloy is obtained.

Description

technical field [0001] The invention relates to the technical field of aluminum-silicon alloy surface treatment, in particular to a method for preparing an aluminum-silicon alloy micro-arc oxidation film layer. Background technique [0002] Aluminum-silicon alloy is a forging and casting alloy mainly composed of aluminum and silicon. It has a small solidification shrinkage rate, good casting performance and low production cost, so it has a wide application prospect in industry. However, due to its unsatisfactory surface properties such as wear resistance, corrosion resistance or heat resistance, it still needs surface treatment to improve its surface performance during application, so as to meet certain higher service conditions. In the existing technology, researchers usually use common surface treatment processes such as anodic oxidation to improve its surface properties. However, because the silicon phase is difficult to oxidize under normal conditions, it is impossible t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D11/16C25D11/06
CPCC25D11/024C25D11/026C25D11/06C25D11/16
Inventor 李康李文芳易爱华祝闻廖忠淼陈肯田君
Owner DONGGUAN UNIV OF TECH
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