SnO2 film perovskite solar cell and preparation method thereof
A solar cell and perovskite technology, applied in the field of solar cells, can solve the problems of pinholes and cracks in thin films, achieve the effects of low toxicity, avoid agglomeration, and reduce production costs
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[0065] This application proposes a SnO 2 A method for preparing a thin-film perovskite solar cell, comprising the following steps:
[0066] Preparation of SnO 2 Electron transport layer: coated with urea and SnCl on the surface of the cathode substrate 2 2H 2 O mixed the precursor colloidal solution obtained.
[0067] Wherein, the cathode substrate may be an FTO (TCO conductive glass) substrate.
[0068] Through the complexation reaction between the carbonyl and amino groups of urea and tin ions in aqueous solution, the SnO 2 The colloidal particles are agglomerated and are beneficial to eliminate pinholes during the annealing process of the film. The urea used has low toxicity, and the whole preparation process can be completely carried out in the air, thereby effectively reducing the preparation cost.
[0069] It is worth noting that the coatings involved in this application can all be carried out by spin coating.
[0070] In the present application, the number of coa...
Embodiment 1
[0112] Please refer to figure 1 , this embodiment provides a SnO 2 Thin film perovskite solar cell, its preparation method is as follows:
[0113] (1) Use detergent, deionized water, isopropanol, absolute ethanol, and isopropanol to ultrasonically clean the FTO substrate for 30 minutes, then dry it with a hair dryer, and then treat it with ultraviolet ozone for 15 minutes.
[0114] (2) Spin-coat SnO on the FTO surface treated in step (1) 2 Electron transport layer: 0.3384gSnCl 2 2H 2 O and 0.1772g urea were added into 10mL deionized water to react to obtain SnO 2 Precursor colloidal solution. SnO 2 Precursor colloidal solution was spin-coated at 4000rpm / min for 30s for the first time, annealed for 20min at 180°C for the first time; treated with ultraviolet and ozone for 15min, and treated with new SnO 2 The precursor colloidal solution was spin-coated for the second time at 4000rpm / min for 30s, and annealed for the second time at 180°C for 20min.
[0115] (3) on SnO 2...
Embodiment 2
[0131] The main difference between embodiment 2 and embodiment 1 is that the SnO 2 Electron transport layer thickness is different, in this example SnO 2 The thickness of the electron transport layer is 30nm, which corresponds to the SnO 2 The spin-coating times of the precursor colloidal solution is only 1 time. All the other preparation conditions are the same as in Example 1.
[0132] Depend on figure 2 (b) It can be seen that the SnO 2 Thin films are greatly affected by the roughness of the glass substrate.
[0133] from Image 6 It can be seen that the SnO with a thickness of 30nm provided by this embodiment 2 The photoelectric conversion efficiency of the planar perovskite solar cell with the electron transport layer is 15.47%, the open circuit voltage is 1.11V, and the current density is 19.59mA / cm 3 , the fill factor is 71.6%.
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Abstract
Description
Claims
Application Information
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