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Semiconductor epitaxy structure and application and manufacturing methods thereof

An epitaxial structure and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as lattice mismatch, and achieve the effect of improving quality, high quality, and improving withstand voltage

Pending Publication Date: 2020-11-20
SHENZHEN JING XIANG TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, when third-generation semiconductor materials, such as gallium nitride, are used as semiconductor epitaxial structures, there are still many problems, such as lattice mismatch and other problems.

Method used

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  • Semiconductor epitaxy structure and application and manufacturing methods thereof
  • Semiconductor epitaxy structure and application and manufacturing methods thereof
  • Semiconductor epitaxy structure and application and manufacturing methods thereof

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Embodiment Construction

[0086] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0087] see figure 1 , this embodiment proposes a semiconductor device 100 , the semiconductor device 100 includes a growth cavity 110 , a base 111 , a target 123 and a magnet 122 . The base 111 is arranged in the growth chamber 110, the base 111 can be arranged at the bottom of the growth chamber 110, and one or more substrates 112 (for example four, six or more) are allowed to be placed on the base 111 . In some embodiments, the di...

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Abstract

The invention provides a semiconductor epitaxy structure and application and manufacturing methods thereof. The semiconductor epitaxy structure comprises a substrate, an aluminum nitride layer formedon the substrate, a first aluminum gallium nitride layer formed on the aluminum nitride layer, a second aluminum gallium nitride layer formed on the first aluminum gallium nitride layer and a galliumnitride layer formed on the second aluminum gallium nitride layer, wherein the aluminum content of the first aluminum gallium nitride layer is higher than the aluminum content of the second aluminum gallium nitride layer. According to the provided semiconductor epitaxy structure, the quality of the semiconductor epitaxy structure can be improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor epitaxial structure and its application and manufacturing method. Background technique [0002] Since the third-generation semiconductor materials, such as gallium nitride or silicon carbide, have the advantages of large band gap, high electron saturation rate, high breakdown electric field, high thermal conductivity, corrosion resistance and radiation resistance, they can be used as semiconductor materials , to obtain a semiconductor epitaxial structure. [0003] However, when third-generation semiconductor materials, such as gallium nitride, are used as semiconductor epitaxial structures, there are still many problems, such as lattice mismatch and other problems. Contents of the invention [0004] In view of the above defects in the prior art, the present invention proposes a semiconductor epitaxial structure and its application and manufacturing method to reduc...

Claims

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Application Information

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IPC IPC(8): C23C14/02C23C14/35C23C14/50C23C14/54
CPCH01L21/2036H01L21/0254H01L29/2003H01L21/02598H01L21/02631H01L21/02381H01L21/3245H01L33/007H01L33/16H01L33/12H01L33/06H01L27/156H01L29/66462H01L29/778H01L29/7783C23C14/0617C23C14/54C23C14/541C23C14/35C23C14/022C23C14/5806C23C16/303C23C28/04C23C16/50
Inventor 陈卫军刘美华
Owner SHENZHEN JING XIANG TECH CO LTD
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