GaN high-electron-mobility transistor structure and manufacturing method thereof

Abstract

The invention relates to the technical field of electronic part manufacturing, in particular to a GaN high-electron-mobility transistor structure and a manufacturing method thereof, and aims to solvethe problem that in the prior art, due to the fact that the edge of a gate electrode is of a sharp corner structure, an electric field is concentrated, and the performance and reliability of a GaN high-electron-mobility transistor can be affected. The GaN-based high-electron-mobility transistor structure is technically characterized by comprising a substrate; a channel layer positioned on the substrate; a barrier layer located on the channel layer; a source electrode, a drain electrode and a grid electrode located on the barrier layer, and a dielectric layer positioned between the grid electrode and the barrier layer. The grid electrode is located between the source electrode and the drain electrode; a groove is formed in the dielectric layer in the gate width direction, and the edge, corresponding to the gate, of the groove is a circular bead. The stress concentration effect of the gate edge is overcome by removing the sharp corners at the gate edge, so that the breakdown voltage ofthe GaN high-electron-mobility transistor is further improved, and the performance of the high-electron-mobility transistor is further improved.

Description

technical field [0001] The invention relates to the technical field of electronic component manufacturing, in particular to a GaN high electron mobility transistor structure and a manufacturing method thereof. Background technique [0002] Today, silicon-based power electronic devices occupy the mainstream consumer market. However, with the continuous development of technology, the potential of Si materials in achieving higher withstand voltage, lower on-resistance and higher switching speed has been exhausted. The band gap of GaN is about 3 times that of Si, the critical breakdown field strength is also 1 order of magnitude higher than that of Si, and the electron mobility and thermal conductivity are also better, which makes GaN-based high electron mobility transistors in power conversion, microwave It has obvious advantages in high-voltage, high-current, high-frequency and high-temperature workplaces such as communications. A large number of researchers have proposed va...

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Problems solved by technology

[0003] Therefore, the technical problem to be solved by the present invention is to overcome the problem of electric field concentration in the prior art that the edge of the gate electrode is a sharp-angled structure, which will affect the performance and reliability of the GaN high electron mobility transistor, and provide a GaN high electron mobility transistor. High-rate transistor structure and its fabrication method

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