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GaN-based lateral structure light emitting diode based on Fe doping and preparation method thereof

A technology of light-emitting diodes and lateral structures, applied in the field of microelectronics, which can solve the problems of cumbersome implementation, increased cost of layer structure production, defects and stress effects, etc., and achieve the effects of improving luminous efficiency, strong availability, and convenient operation

Inactive Publication Date: 2020-11-24
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above two structures require additional growth of the corresponding layer structure, which is relatively cumbersome to realize.
And in the specific growth process, the complexity of the layer structure will not only increase the production cost, but also the additional layer stacking will also affect the defects and stress of other layer structures.

Method used

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  • GaN-based lateral structure light emitting diode based on Fe doping and preparation method thereof
  • GaN-based lateral structure light emitting diode based on Fe doping and preparation method thereof
  • GaN-based lateral structure light emitting diode based on Fe doping and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Embodiment 1, preparation substrate is sapphire, multiple quantum well is In 0.01 Ga 0.99 N / Al 0.1 Ga 0.9 N, a light emitting diode with a light emitting wavelength of 365nm.

[0038] In step one, the substrate is pretreated.

[0039] 1a) Clean the selected substrate: put the substrate into HF acid or HCl acid for ultrasonic cleaning for 5-10 minutes, then put it into acetone solution for ultrasonic cleaning for 5-10 minutes, and then use absolute ethanol solution for ultrasonic cleaning for 5-10 minutes. 10min, then ultrasonic cleaning with deionized water for 5-10min, and finally drying with nitrogen;

[0040] 1b) Place the cleaned sapphire substrate in the metal organic chemical vapor deposition MOCVD reaction chamber, and reduce the vacuum degree of the reaction chamber to 2×10 -2 Torr: Introduce hydrogen gas into the reaction chamber, and under the condition that the pressure of the MOCVD reaction chamber reaches 50 Torr, heat the substrate to a temperature of...

Embodiment 2

[0059] Embodiment 2, the prepared substrate is silicon carbide, and the multiple quantum wells are In 0.15 Ga 0.85 N / Al 0.08 Ga 0.92 N, a light emitting diode with a light emitting wavelength of 420nm.

[0060] Step 1, pretreating the substrate.

[0061] 1.1) Cleaning the selected substrate: the specific implementation of this step is the same as step 1a) of Example 1;

[0062] 1.2) Place the cleaned silicon carbide substrate in the metal organic chemical vapor deposition MOCVD reaction chamber, and reduce the vacuum degree of the reaction chamber to 2×10 -2 Torr: Introduce hydrogen into the reaction chamber, and under the condition that the pressure of the MOCVD reaction chamber reaches 750 Torr, the substrate is heated to a temperature of 1200° C. and kept for 5 minutes to complete the heat treatment of the substrate.

[0063] 1.3) The heat-treated substrate is placed in a reaction chamber at a temperature of 1100° C., and ammonia gas with a flow rate of 3500 sccm is fe...

Embodiment 3

[0082] Embodiment 3, the prepared substrate is silicon, and the multiple quantum wells are In 0.4 Ga 0.85 N / GaN, the emission wavelength is 540nm

[0083] led.

[0084] Step A, pretreatment of the substrate.

[0085] A1) Cleaning the selected substrate: the specific implementation of this step is the same as step 1a) of Example 1;

[0086] A2) After the silicon substrate is cleaned, it is placed in the metal organic chemical vapor deposition MOCVD reaction chamber, and the vacuum degree of the reaction chamber is reduced to 2×10 -2 Torr: Introduce hydrogen gas into the reaction chamber, and under the condition that the pressure of the MOCVD reaction chamber reaches 400 Torr, heat the substrate to a temperature of 1000°C and keep it for 9 minutes to complete the heat treatment of the substrate substrate; then heat-treated the substrate Place in a reaction chamber with a temperature of 1150° C., pass through ammonia gas with a flow rate of 5000 sccm, and carry out nitriding ...

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Abstract

The invention discloses a GaN-based lateral structure light-emitting diode based on Fe doping and a preparation method thereof, and mainly solves the problem of current edge collection when the existing GaN-based lateral structure light-emitting diode works. The GaN-based lateral structure light-emitting diode comprises from bottom to top, a substrate (1), a low-temperature GaN nucleating layer (2), an n-type GaN layer (3), an InxGa1-xN / AlyGa1-yN multi-quantum well layer (4), a p-type GaN layer (5) and an electrode (6); the n-type GaN layer (3) is of a three-layer structure, the first layer isa n-type GaN layer, the second layer is a Fe-doped n-type GaN layer, and the third layer is a n-type GaN layer to reduce carrier concentration. The concentration of the n-type GaN layer is reduced through Fe doping, the current edge collecting effect is avoided, current expansion is achieved, the light-emitting efficiency and reliability of the GaN-based lateral structure light-emitting diode areimproved, and the GaN-based lateral structure light-emitting diode can be used in high-brightness lighting equipment and LED display equipment.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a GaN-based lateral structure light-emitting diode, which can be used in high-brightness lighting equipment and various LED display equipment. [0002] technical background [0003] Light-emitting diodes based on GaN systems have unique advantages in visible light and ultraviolet light sources. In GaN-based light-emitting diodes, the lateral structure is currently the mainstream structure, but because the current of the lateral-structured light-emitting diode needs to go through a "lateral flow" process during operation, the current aggregation effect often occurs at the corners, which limits the device. The performance of the device causes the problem of poor reliability of the device. Therefore, how to expand the current and reduce the influence of the current edge effect is an important goal of designing and manufacturing light-emitting diodes. [0004] I...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14H01L33/06H01L33/32H01L33/00
CPCH01L33/14H01L33/06H01L33/32H01L33/0075
Inventor 许晟瑞苏华科高源张雅超陈大正李培咸张进成郝跃
Owner XIDIAN UNIV