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Amorphous silicon photoelectric layer thin film preparation method based on photoelectric tweezers equipment

A thin film preparation, amorphous silicon technology, applied in coatings, circuits, electrical components, etc., to improve performance and quality, improve conversion efficiency, and reduce costs and time

Inactive Publication Date: 2020-11-27
苏州黑星科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The invention provides a method for preparing an amorphous silicon photoelectric layer thin film based on photoelectric tweezers equipment, which effectively solves the shortage of the existing photoelectric layer thin film preparation technology based on photoelectric tweezers

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  • Amorphous silicon photoelectric layer thin film preparation method based on photoelectric tweezers equipment
  • Amorphous silicon photoelectric layer thin film preparation method based on photoelectric tweezers equipment
  • Amorphous silicon photoelectric layer thin film preparation method based on photoelectric tweezers equipment

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Embodiment

[0027] like figure 1 Shown is the process flow of the preparation method of the amorphous silicon photoelectric layer film based on the photoelectric tweezers equipment provided by the present invention. It can be seen from the figure that the preparation method includes: S1, ultrasonic cleaning of ITO, and plasma treatment of the surface; S2, on the ITO The amorphous silicon layer (a-Si) is prepared by magnetron sputtering; S3, the zinc oxide layer (ZnO) is prepared by magnetron sputtering on the amorphous silicon layer; S4, the amorphous silicon film is post-annealed under nitrogen protection, A nitride protective film is formed on the surface.

[0028] In step S1-4, as figure 2 As shown, on the substrate 10, an amorphous silicon layer 20 is formed by sputtering, and a zinc oxide layer 30 is sputtered on the amorphous silicon layer.

[0029] In a specific implementation process, the substrate 10 is made of transparent conductive glass ITO, and the conductive glass is succ...

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Abstract

The invention discloses an amorphous silicon photoelectric layer thin film preparation method based on photoelectric tweezers equipment. By conducting ultrasonic cleaning and plasma treatment on an ITO substrate, the binding force between an amorphous silicon photoelectric layer and a base is improved; the surface uniformity of a thin film prepared through magnetron sputtering is high; and finally, through nitrogen protective annealing treatment, defects of the photoelectric layer are effectively decreased, residual stress of the thin film is eliminated, and a protective layer is formed on thesurface to avoid that the thin film is oxidized in the using process. According to the photoelectric layer thin film preparation method, the technology procedure is simplified, the quality of the thin film is improved, the control safety is improved, the cost is reduced, accordingly, a photoelectric tweezers system containing photoelectric layer chips can be widely applied and popularized to actual cell testing and other tests and has good industrialized prospects.

Description

technical field [0001] The invention relates to the technical field of optical field control, in particular to a method for preparing an amorphous silicon photoelectric layer thin film based on photoelectric tweezers equipment. Background technique [0002] Among the related technologies, the optoelectronic operation technology based on high-performance optoelectronic materials is a unique high-precision technology in foreign countries. The optical tweezers technology won the Nobel Prize in Physics in 2018. At present, some companies have developed relatively mature optical tweezers systems, such as Thorlab in the United States, Lumicks m-Trap in the Netherlands, and some companies in Silicon Valley. However, the current optoelectronic operation technology still has limitations in the following aspects: 1. It is difficult to capture objects close to or smaller than the wavelength of light; 2. Opaque objects cannot be captured; 3. Objective lenses with high NA are required; 4...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/02C23C14/08C23C14/18C23C14/58H01L31/028H01L31/20
CPCC23C14/35C23C14/185C23C14/086C23C14/5806C23C14/022C23C14/586H01L31/028H01L31/202H01L31/208Y02P70/50
Inventor 冯林曹宇擎陈迪晓梁树璋
Owner 苏州黑星科技有限公司
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