Method of forming oxide film, method of manufacturing semiconductor device, and film forming apparatus configured to form oxide film

A film-forming method and oxide film technology, which are applied in semiconductor/solid-state device manufacturing, chemical instruments and methods, and from chemically reactive gases, etc., can solve the problem of low crystallinity of oxide film

Pending Publication Date: 2020-12-08
DENSO CORP +1
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As such, in the conventional technology, there is a problem that the crystallinity of the oxide film becomes lower when the film formation rate of the oxide film becomes faster.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of forming oxide film, method of manufacturing semiconductor device, and film forming apparatus configured to form oxide film
  • Method of forming oxide film, method of manufacturing semiconductor device, and film forming apparatus configured to form oxide film
  • Method of forming oxide film, method of manufacturing semiconductor device, and film forming apparatus configured to form oxide film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] figure 1 The shown film forming apparatus 10 is an apparatus for epitaxially growing a gallium oxide film on the surface of a substrate 12 . The gallium oxide film is a semiconductor film. The film forming apparatus 10 is used to manufacture a semiconductor device having a gallium oxide film. The film forming apparatus 10 has a heating furnace 20 and a storage tank 40 .

[0013] The storage tank 40 is an airtight container. Storage tank 40 is stored with the raw material of gallium oxide film dissolved in water (H 2 O) the solution 42 formed. A space 44 is provided between the water surface 42 a of the solution 42 and the upper surface of the storage tank 40 . An ultrasonic vibrator 48 is provided on the bottom surface of the storage tank 40 . The ultrasonic vibrator 48 applies ultrasonic waves to the solution 42 stored in the storage tank 40 . When ultrasonic waves are applied to the solution 42, the water surface 42a of the solution 42 vibrates, and a spray of ...

Embodiment 2

[0026] figure 2 The film formation apparatus 100 of Example 2 shown is an apparatus for epitaxially growing a gallium oxide film on the surface of a substrate 112 . The film forming apparatus 100 is used to manufacture a semiconductor device having a gallium oxide film. The film forming apparatus 100 has a first spray supply device 191 , a second spray supply device 192 , and a heating furnace 120 .

[0027] The furnace 120 is a tubular furnace extending from an upstream end 120a to a downstream end 120b. The downstream end of the solution spray supply path 130 is connected to the upstream end 120 a of the heating furnace 120 . The discharge pipe 128 is connected to the downstream end 120 b of the heating furnace 120 . A substrate mounting table 126 for supporting the substrate 112 is provided in the heating furnace 120 . The substrate mounting table 126 is configured such that the substrate 112 is inclined with respect to the longitudinal direction of the heating furnace...

Embodiment 3

[0044] image 3 The film formation apparatus 200 of Example 3 is shown. In the film forming apparatus of Example 3, spray and gas are ejected from nozzles 210 to a plurality of substrates 212 . In addition, in Example 3, descriptions of spray and gas supply devices (for example, storage tanks and gas supply sources) are omitted.

[0045] The film forming apparatus of Example 3 has a substrate mounting table 226 capable of mounting a plurality of substrates 212 . A heater 227 for heating the substrate 212 is provided inside the substrate mounting table 226 . A plurality of substrates 212 are arranged around a central axis 226 a of the substrate mounting table 226 . The substrate stage 226 rotates around the central axis 226a. The nozzle 210 is arranged on the substrate mounting table 226 . The nozzle 210 and the substrate mounting table 226 are installed in the heating furnace. The nozzle 210 has a rectangular parallelepiped shape that is long in one direction. On the lo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a method of forming an oxide film, a method of manufacturing a semiconductor device, and a film forming apparatus configured to form an oxide film. An oxide film having a high degree of crystallinity can be formed in a short period of time. The method of forming an oxide film includes: supplying mist of a solution including a material of the oxide film dissolved therein to asurface of a substrate while heating the substrate at a first temperature so as to epitaxially grow the oxide film on the surface of the substrate; and bringing the oxide film into contact with a fluid comprising oxygen atoms while heating the oxide film at a second temperature higher than the first temperature after the epitaxial growth of the oxide film.

Description

technical field [0001] The technology disclosed in this specification relates to a method of forming an oxide film, a method of manufacturing a semiconductor device, and an apparatus for forming an oxide film. Background technique [0002] Patent Document 1 discloses a method for forming an oxide film. In this film forming method, a spray of a solution in which the material of the oxide film is dissolved is supplied to the surface of the substrate. The oxide film is epitaxially grown on the surface of the substrate by spraying and adhering to the surface of the substrate. [0003] Patent Document 1: Japanese Patent Laid-Open No. 2015-070248 [0004] In the case of epitaxial growth of the oxide film using spray, the lower the temperature of the substrate, the faster the film formation rate of the oxide film. On the other hand, in the film-forming method using spraying, if the oxide film is epitaxially grown at a low temperature, oxygen vacancies (defects in which oxygen at...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/16C30B25/02C30B33/02C23C16/40C23C16/448C23C16/56H01L21/368H01L21/67
CPCC30B29/16C30B25/02C30B33/005C23C16/40C23C16/4481C23C16/56H01L21/02565H01L21/02628H01L21/02672H01L21/67011H01L21/0242H01L21/0262H01L21/02576C30B25/14H01L21/02664H01L21/02579C30B29/22C30B25/00C30B19/106C30B19/06
Inventor 永冈达司西中浩之吉本昌广
Owner DENSO CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap