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Scaled hollow SnSe nanotube self-powered infrared detector and preparation method thereof

A technology of infrared detectors and nanotubes, applied in nanotechnology, nanotechnology, electric radiation detectors, etc., can solve the problems of easy introduction of impurities, achieve high-efficiency electron transmission, improve performance, and be suitable for large-scale production and application.

Active Publication Date: 2020-12-22
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to solve the technical problems that SnSe nanotubes need to be synthesized at high temperature and use chemical reagents to remove hard templates and easily introduce impurities, and provide a simple and easy-to-operate method for preparing fish-scale hollow SnSe nanotubes, further Using this material to prepare self-powered infrared detectors is of great significance to the development of room temperature infrared detectors

Method used

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  • Scaled hollow SnSe nanotube self-powered infrared detector and preparation method thereof
  • Scaled hollow SnSe nanotube self-powered infrared detector and preparation method thereof
  • Scaled hollow SnSe nanotube self-powered infrared detector and preparation method thereof

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specific Embodiment approach 1

[0043] Specific implementation mode one (refer to Figure 4 ): a kind of scale-shaped hollow SnSe nanotube self-powered infrared detector of the present embodiment includes a working electrode, a counter electrode and an electrolyte; Electrolyte is injected into the interior, and the working electrode is FTO glass (300mm 2 ); the surface of the SnSe nanotube is in the shape of fish scales, and the inside is hollow; the counter electrode is a Pt electrode; the electrolyte is a polysulfide electrolyte solution.

[0044] The method for preparing the above fish scale hollow SnSe nanotube self-powered infrared detector is carried out according to the following steps:

[0045] 1. Add 90mL of SeO 2 The mixed solution of β-cyclodextrin and 90mL of ascorbic acid solution were mixed and reacted for 4 hours to obtain Se nanoparticles. The Se nanoparticles were dispersed in 30mL of absolute ethanol at room temperature, aged in the dark for 48 hours, and dried naturally to obtain Se nanow...

specific Embodiment approach 2

[0052] Embodiment 2: This embodiment differs from Embodiment 1 in that simple Ag nanoparticles are deposited on the surface of the SnSe nanotubes; other steps and parameters are the same as Embodiment 1.

[0053] The difference between the preparation method of the fish scale-shaped hollow SnSe nanotube self-powered infrared detector and the first embodiment is that the specific process of step three is: the Se@SnSe nanomaterial obtained in step two is heated at 350°C under the protection of argon Annealing at lower temperature for 1 hour, to obtain SnSe nanotubes with scale-like surface and hollow structure inside, disperse 0.02g of SnSe nanotubes in 30mL silver nitrate solution with a concentration of 0.05mol / L, and use ultraviolet light with a wavelength of 365nm Irradiate for 15 minutes, centrifuge and wash, then dry to obtain SnSe nanotubes with simple Ag nanoparticles deposited on the surface; other steps and parameters are the same as those in Embodiment 1.

[0054] Det...

specific Embodiment approach 3

[0055] Embodiment 3: This embodiment is different from Embodiment 1 in that: the surface of the SnSe nanotube is also coated with SnS. Other steps and parameters are the same as those in the first embodiment.

[0056] In this embodiment, by obtaining the SnS@SnSe nanocomposite material, the recombination of the photogenerated electron-hole pairs of the SnSe nanotube is suppressed, and the detection performance of the device is improved.

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Abstract

The invention discloses a scaled hollow SnSe nanotube self-powered infrared detector and a preparation method thereof. The invention belongs to the field of photoelectric detectors and preparation thereof. The invention aims to solve the technical problems that SnSe nanotubes need to be synthesized at a high temperature, a hard template needs to be removed by using a chemical reagent, and impurities are easy to introduce. The infrared detector comprises a working electrode, a counter electrode and an electrolyte; the working electrode and the counter electrode are connected through a heat sealing film, a cavity is formed in the working electrode and the counter electrode, electrolyte is injected into the cavity, and the working electrode is ITO glass or FTO glass of which the surface is spin-coated with SnSe nanotubes; and the surface of the SnSe nanotubes is in a fish scale shape, and the interior of the SnSe nanotubes is of a hollow structure. The method comprises the following steps: 1, preparing Se nanowires; 2, preparing a Se-coated SnSe nano material; 3, preparing a SnSe nano tube; and 4, manufacturing an infrared detector. The SnSe nanotube structure synthesized by a solution method has a unique scale-shaped hollow structure, and the method has the advantages of low cost, easiness in operation, environmental friendliness and the like, and is suitable for large-scale production and application.

Description

technical field [0001] The invention belongs to the field of photodetection devices and its preparation; in particular, it relates to a scale-shaped hollow SnSe nanotube self-powered infrared detector and a preparation method thereof. Background technique [0002] As a key component in military and civilian fields, infrared detectors have attracted widespread attention in aerospace, safety monitoring, and environmental detection. With the continuous development of detectors and people's daily needs, new photodetectors with high sensitivity, fast response and self-power have attracted attention. Self-powered infrared detectors can quickly respond to infrared light without an external power source, and are low-cost and easy to prepare, which has become a current research hotspot. In addition, SnSe, as a typical narrow-bandgap semiconductor material, is an ideal material for constructing infrared detectors due to its good electrical conductivity, high chemical stability, low c...

Claims

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Application Information

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IPC IPC(8): G01J5/10G01J5/02B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00G01J5/023G01J5/10
Inventor 高世勇王金忠任帅刘烁张勇
Owner HARBIN INST OF TECH
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